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Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT N-Channel 1 Channel 80 V 290 A 1.9 Ohms 20 V 3.8 V 94 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies IPP023N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.3 mOhms 20 V 3.8 V 133 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies IPP027N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.7 mOhms 20 V 3.8 V 99 nC - 55 C + 175 C 214 W Enhancement Tube