RJ1P10BATTL1

ROHM Semiconductor
755-RJ1P10BATTL1
RJ1P10BATTL1

Mfr.:

Description:
MOSFETs Pch -100V -105A, TO-263AB, Power MOSFET : V

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFETs
Reel
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Brand: ROHM Semiconductor
Product Type: MOSFETs
Factory Pack Quantity: 800
Subcategory: Transistors
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Compliance Codes
USHTS:
8541290040
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

RJ1P10BAT P-Channel Power MOSFET

ROHM Semiconductor RJ1P10BAT P-Channel Power MOSFET has a drain-source voltage (VDSS) rating of -100V and a continuous drain current (ID) rating (VGS = 10V) of ±105A. It comes in a high-power TO-263AB package and is 100% Rg and UIS tested. The ROHM Semiconductor RJ1P10BAT has a 201W power dissipation (PD) and a static drain-source on-state resistance (RDS(on)) of 9.4mΩ (typ.) (VGS = -10V, ID = -50A) or 10.4mΩ (typ.) (VGS = -6V, ID = -50A).

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
800
Expected 9/8/2026
Factory Lead-Time:
18
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥1,081.3 ¥1,081
¥737.5 ¥7,375
¥529.9 ¥52,990
¥481.7 ¥240,850
Full Reel (Order in multiples of 800)
¥440.2 ¥352,160