HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs TO268 650V 34A N-CH X4CLASS
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V/440A TrenchT4 Power MOSFET
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 40 V 440 A 1.25 mOhms - 15 V, 15 V 2 V 480 nC - 55 C + 175 C 940 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel Trench Gate TrenchT2 MOSFET
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 55 V 440 A 1.8 mOhms - 20 V, 20 V 2 V 405 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube
IXYS MOSFETs Trench T2 Power MOSFET
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 40 V 500 A 1.6 mOhms - 20 V, 20 V 3.5 V 405 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO251 700V 4A N-CH X2CLASS
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 700 V 2 A 850 mOhms - 30 V, 30 V 2.5 V 11.8 nC - 55 C + 150 C 80 W Enhancement HiPerFET Tube
IXYS MOSFETs 700V/8A Ultra Junct X2-Class MOSFET
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 350
Mult.: 70

Si Through Hole TO-251-3 N-Channel 1 Channel 700 V 8 A 500 mOhms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube

IXYS MOSFETs PLUS247 650V 102A N-CH X2CLASS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 102 A 30 mOhms - 30 V, 30 V 3 V 152 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 55 V 55 A 1.6 mOhms - 20 V, 20 V 2 V 595 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 20
Si SMD/SMT SMPD-24 N-Channel 500 V 63 A 43 mOhms HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 250 V 130 A 13 mOhms - 20 V, 20 V 3 V 364 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 200 V 156 A 8.3 mOhms HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 150 V 235 A 4.4 mOhms - 20 V, 20 V 5 V 715 nC - 55 C + 175 C 680 W Enhancement HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device
Datasheet
Non-Stocked Lead-Time 19 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1.1 kV 24 A 290 mOhms HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 100 V 334 A 2.6 mOhms - 20 V, 20 V 2.5 V 670 nC - 55 C + 175 C 680 W Enhancement HiPerFET Tube
IXYS MOSFETs HiperFET Pwr MOSFET Q3-Class
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 kV 30 A 245 mOhms - 30 V, 30 V 264 nC - 55 C + 150 C HiPerFET Tube
IXYS MOSFETs SMPD MOSFETs Power Device
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 55 V 550 A 1.3 mOhms - 20 V, 20 V 3.8 V 595 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V 600A
Datasheet
Non-Stocked Lead-Time 21 Weeks
Min.: 300
Mult.: 20

Si SMD/SMT SMPD-24 N-Channel 1 Channel 40 V 600 A 1.3 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs 650v/32A Power MOSFET
Datasheet
N/A

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 32 A 135 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube