HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

結果: 719
選択 画像 部品番号 メーカ 説明 データシート 在庫状況 価格: (JPY) 数量に基づき、単価ごとに表の結果をフィルタリングする 数量 RoHS ECADモデル 技術 取り付け様式 パッケージ/ケース トランジスタ極性 チャンネル数 Vds - ドレイン - ソース間破壊電圧 Id - 連続ドレイン電流 Rds On - 抵抗におけるドレイン - ソース Vgs - ゲート-ソース間電圧 Vgs th - ゲート・ソース間しきい電圧 Qg - ゲート電荷 最低動作温度 最高動作温度 Pd - 電力損失 チャネルモード 認証 トレードネーム パッケージ化

IXYS MOSFET 96 Amps 200V 0.024 Rds 730在庫
最低: 1
複数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 5 V 145 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 357在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET 140 Amps 300V 0.024 Ohms Rds 263在庫
100予想2026/08/20
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 140 A 24 mOhms - 20 V, 20 V 3 V 185 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET TO264 300V 210A N-CH X3CLASS 388在庫
2,325取寄中
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 210 A 5.5 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 541在庫
25予想2026/08/13
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 240 A 5.2 mOhms - 20 V, 20 V 2.5 V 460 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm 181在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 300 A 4 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A 128在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 320 mOhms - 30 V, 30 V 6.5 V 195 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 88在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 360 A 4 mOhms - 20 V, 20 V 2.5 V 715 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube
IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A 321在庫
25予想2026/09/22
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 420 A 2.6 mOhms - 20 V, 20 V 5 V 670 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube
IXYS MOSFET 500V 44A 196在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 44 A 140 mOhms - 30 V, 30 V 3 V 98 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFET 44 Amps 800V 255在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 44 A 190 mOhms - 30 V, 30 V 3 V 198 nC - 55 C + 150 C 1.2 mW Enhancement HiPerFET Tube
IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 314在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A 202在庫
50予想2026/09/14
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 3.5 V 145 nC - 55 C + 150 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET 139在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 80 A 70 mOhms - 30 V, 30 V 5 V 190 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET PolarP2 Power MOSFET 164在庫
300予想2026/08/10
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET 238在庫
最低: 1
複数: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 98 A 50 mOhms - 30 V, 30 V 5 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TO220 300V 72A N-CH X3CLASS 1,249在庫
最低: 1
複数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 72 A 19 mOhms - 20 V, 20 V 2.5 V 82 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 250V/80A Ultra Junct ion X3-Class MOSFET 352在庫
最低: 1
複数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 80 A 13 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET Polar3 HiPerFET Power MOSFET 1,861在庫
最低: 1
複数: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 5 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFET 75 Amps 200V 0.018 Rds 245在庫
最低: 1
複数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 90 A 22 mOhms - 20 V, 20 V 5 V 240 nC - 55 C + 175 C 300 W Enhancement HiPerFET Tube

IXYS MOSFET 82 Amps 300V 0.026 Ohm Rds 240在庫
最低: 1
複数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 70 A 26 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET TO268 300V 100A N-CH X3CLASS 295在庫
最低: 1
複数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 100 A 13.5 mOhms - 20 V, 20 V 4.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET TO268 200V 220A N-CH X3CLASS 397在庫
240予想2026/12/29
最低: 1
複数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 220 A 6.2 mOhms - 20 V, 20 V 2.5 V 204 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A 578在庫
30予想2026/09/14
最低: 1
複数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 340 A 3.2 mOhms - 20 V, 20 V 4 V 300 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET 208在庫
最低: 1
複数: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 5 V 96 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube