AISC SMD Ceramic Wire-Wound Chip Inductors

Abracon AISC SMD Ceramic Wire-Wound Chip Inductors are sized at 1.19mm x 0.51mm x 0.66mm with ceramic construction to assure the utmost thermal stability and high SRF. With exceptionally high Q compared to non-wirewound inductors (especially at high frequencies) and an operating temperature of -25°C to 85°C, the Abracon AISC SMD Ceramic Wire-Wound Chip Inductors offer inductance options from 1.0nH to 150nH. The AISC inductors are widely applied in VCO, SAW circuit for GSM, and CDMA communications and in hard disk, notebook computers, and other electronic equipment. The AISC series is available in case sizes 0402, 0603, 0805, 1008, 1206, 1210, 1210H, and 1812H.

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Qty. RoHS Inductance
Tolerance
Maximum DC Current
Maximum Operating Temperature
ABRACON RF Inductors - SMD IND 2.20 nH 0.960 A 70.00 mOhm
Datasheet
18,430In Stock
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Min.: 1
Mult.: 1
: 10,000

2.2 nH 5 % 960 mA
ABRACON RF Inductors - SMD 3.9 NH 2%
Datasheet
29,435In Stock
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Min.: 1
Mult.: 1
: 10,000

3.9 nH 2 % 840 mA
ABRACON RF Inductors - SMD IND 0.47 uH 0.250 A 1720.00 mOhm
Datasheet
16,981In Stock
Min.: 1
Mult.: 1
: 2,000

470 nH 2 % 250 mA + 125 C
ABRACON RF Inductors - SMD IND 22.00 uH 0.070 A 8000.00 mOhm
Datasheet
2,265In Stock
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Min.: 1
Mult.: 1
: 2,000

22 uH 5 % 68 mA + 125 C
ABRACON RF Inductors - SMD IND 4.70 uH 0.140 A 2800.00 mOhm
Datasheet
2,541In Stock
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Min.: 1
Mult.: 1
: 2,000

4.7 uH 5 % 140 mA + 125 C
ABRACON RF Inductors - SMD IND 0.27 uH 0.630 A 560.00 mOhm
Datasheet
872In Stock
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Min.: 1
Mult.: 1
: 2,000

270 nH 5 % 630 mA + 125 C
ABRACON Power Inductors - SMD IND 24.00 nH 1.100 A 80.00 mOhm
Datasheet
2,405In Stock
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Min.: 1
Mult.: 1
: 3,000

24 nH 5 % 1.1 A + 125 C
ABRACON Power Inductors - SMD IND 68.00 nH 0.650 A 280.00 mOhm
Datasheet
1,628In Stock
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Min.: 1
Mult.: 1
: 3,000

68 nH 5 % 650 mA + 125 C
ABRACON RF Inductors - SMD IND 0.15 uH 0.200 A 1120.00 mOhm
Datasheet
4,214In Stock
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Min.: 1
Mult.: 1
: 3,000

150 nH 2 % 200 mA + 125 C
ABRACON RF Inductors - SMD IND 0.27 uH 0.120 A 3000.00 mOhm
Datasheet
2,932In Stock
Min.: 1
Mult.: 1
: 3,000

270 nH 2 % 120 mA + 125 C
ABRACON RF Inductors - SMD IND 6.80 uH 0.120 A 3400.00 mOhm
Datasheet
797In Stock
Min.: 1
Mult.: 1
: 2,000

6.8 uH 2 % 115 mA + 125 C
ABRACON RF Inductors - SMD IND 18.00 nH 0.600 A 200.00 mOhm
Datasheet
487In Stock
Min.: 1
Mult.: 1
: 2,000

18 nH 2 % 600 mA + 125 C
ABRACON RF Inductors - SMD IND 3.90 uH 0.260 A 3600.00 mOhm
Datasheet
1,927In Stock
Min.: 1
Mult.: 1
: 2,000

3.9 uH 2 % 260 mA + 125 C
ABRACON RF Inductors - SMD IND 24.00 nH 0.490 A 190.00 mOhm
Datasheet
2,339In Stock
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Min.: 1
Mult.: 1
: 3,000

24 nH 5 % 490 mA + 125 C
ABRACON RF Inductors - SMD IND 33.00 nH 0.470 A 210.00 mOhm
Datasheet
3,128In Stock
Min.: 1
Mult.: 1
: 3,000

33 nH 5 % 470 mA + 125 C
ABRACON RF Inductors - SMD IND 18.00 nH 0.600 A 200.00 mOhm
Datasheet
12In Stock
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Mult.: 1
: 2,000

18 nH 5 % 600 mA + 125 C
ABRACON RF Inductors - SMD IND 1.00 uH 0.370 A 1800.00 mOhm
Datasheet
4,764In Stock
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Min.: 1
Mult.: 1
: 2,000

1 uH 5 % 370 mA + 125 C
ABRACON RF Inductors - SMD IND 33.00 nH 1.000 A 140.00 mOhm
Datasheet
1,344In Stock
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Min.: 1
Mult.: 1
: 2,000

33 nH 5 % 1 A + 125 C
ABRACON RF Inductors - SMD IND 39.00 nH 1.000 A 120.00 mOhm
Datasheet
1,715In Stock
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Min.: 1
Mult.: 1
: 2,000

39 nH 5 % 1 A + 125 C
ABRACON Power Inductors - SMD IND 56.00 nH 0.700 A 230.00 mOhm
Datasheet
2,416In Stock
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Mult.: 1
: 3,000

56 nH 5 % 700 mA + 125 C
ABRACON RF Inductors - SMD IND 4.70 uH 0.260 A 4000.00 mOhm
Datasheet
1,330In Stock
Min.: 1
Mult.: 1
: 2,000

4.7 uH 2 % 260 mA + 125 C
ABRACON RF Inductors - SMD IND 18.00 nH 1.400 A 80.00 mOhm
Datasheet
2,421In Stock
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Min.: 1
Mult.: 1
: 2,000

18 nH 5 % 1.4 A + 125 C
ABRACON RF Inductors - SMD IND 39.00 nH 1.300 A 90.00 mOhm
Datasheet
735In Stock
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: 2,000

39 nH 5 % 1.3 A + 125 C
ABRACON RF Inductors - SMD IND 0.39 uH 0.530 A 800.00 mOhm
Datasheet
424In Stock
2,000Expected 1/28/2027
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Min.: 1
Mult.: 1
: 2,000

390 nH 5 % 530 mA + 125 C
ABRACON RF Inductors - SMD IND 10.00 nH 0.480 A 200.00 mOhm
Datasheet
7,177In Stock
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Min.: 1
Mult.: 1
: 10,000

10 nH 2 % 480 mA