SiT8008 Low Power Programmable Oscillators

SiTime SiT8008 and SiT8008B low-power programmable oscillators include a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. The programmable drive strength improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. The programmable drive strength also improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. The components have the ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The oscillators exhibit EMI reduction by slowing rise/fall time and jitter reduction with faster rise/fall time. Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The components have high output load capability. The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. The devices can support up to 60pF or higher in maximum capacitive loads with drive strength settings.

Results: 661
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS Package / Case Frequency Frequency Stability Load Capacitance Supply Voltage - Min Supply Voltage - Max Output Format Current Rating Minimum Operating Temperature Maximum Operating Temperature Qualification Series
SiTime SIT8008BI-32-XXN-24.000000x
SiTime MEMS Oscillators -40 to 85C, 5032, 25ppm, 2.25V-3.63V, 24MHz, NC, 250 pcs T&R 12/16 mm Non-Stocked Lead-Time 14 Weeks
Min.: 250
Mult.: 250
: 250

24 MHz 25 PPM 2.25 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-23-33N-14.745600G
SiTime MEMS Oscillators Non-Stocked
Min.: 250
Mult.: 250
14.7456 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-71-18E-24.000000G
SiTime MEMS Oscillators -40 to 85C, 2016, 20ppm, 1.8V, 24MHz, OE, 250 pcs T&R 8 mm Non-Stocked Lead-Time 14 Weeks
Min.: 250
Mult.: 250
: 250

24 MHz 20 PPM 1.62 V 1.98 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-71-XXE-100.000000G
SiTime MEMS Oscillators Non-Stocked
Min.: 250
Mult.: 250

100 MHz 20 PPM 2.25 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-71-XXE-6.167910G
SiTime MEMS Oscillators Non-Stocked
Min.: 250
Mult.: 250
6.16791 MHz 20 PPM 2.25 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-71-XXE-6.005284G
SiTime MEMS Oscillators Non-Stocked
Min.: 250
Mult.: 250
6.005284 MHz 20 PPM 2.25 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-71-XXE-7.370000G
SiTime MEMS Oscillators Non-Stocked
Min.: 250
Mult.: 250
7.37 MHz 20 PPM 2.25 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-82-33E-100.000000x
SiTime MEMS Oscillators -40 to 85C, 7050, 25ppm, 3.3V, 100MHz, OE, 250 pcs T&R 12/16 mm Lead-Time 14 Weeks
Min.: 250
Mult.: 250
: 250

100 MHz 25 PPM 15 pF 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-83-18E-100.000000x
SiTime MEMS Oscillators Non-Stocked
Min.: 250
Mult.: 250

100 MHz 50 PPM 1.62 V 1.98 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BI-82-33E-22.579200x
SiTime MEMS Oscillators Non-Stocked
Min.: 250
Mult.: 250

22.5792 MHz 25 PPM 2.97 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime SIT8008BIL83-33E-16.000000x
SiTime MEMS Oscillators Non-Stocked
Min.: 250
Mult.: 250

16 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B