NXH004P120M3F2PNG

onsemi
863-XH004P120M3F2PNG
NXH004P120M3F2PNG

Mfr.:

Description:
Discrete Semiconductor Modules 1200V 4MOHM M3S SIC HALFBRIDGE WITH SI3N4 DBC IN F2 MODULES

Datasheet:
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Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Discrete Semiconductor Modules
RoHS:  
SiC Modules
Half Bridge
SiC
5.1 V
- 10 V, + 22 V
Press Fit
PIM-36
- 40 C
+ 175 C
NXH004P120M3F2PNG
Tray
Brand: onsemi
Configuration: Half Bridge
Fall Time: 15 ns
Id - Continuous Drain Current: 338 A
Pd - Power Dissipation: 1.098 kW
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 5.5 mOhms
Rise Time: 15 ns
Factory Pack Quantity: 20
Subcategory: Discrete Semiconductor Modules
Tradename: EliteSiC
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 127 ns
Typical Turn-On Delay Time: 49 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.8 V
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Attributes selected: 0

Datasheet

Compliance Codes
JPHTS:
854129000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.

In Stock: 20

Stock:
20 Can Ship Immediately
Factory Lead-Time:
49 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:
This Product Ships FREE

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥46,310.3 ¥46,310
¥37,777.8 ¥377,778

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