STMicroelectronics SiC MOSFETs

Results: 59
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 Mfr.
Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1

Through Hole HiP247-4 1.2 kV 30 A 87 mOhms - 10 V, + 22 V 3 V 41 nC - 55 C + 200 C 236 W Enhancement
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1
Mult.: 1

AEC-Q100
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 448
Mult.: 448

Through Hole 1 Channel 1.2 kV 239 A 10.5 mOhms - 10 V, 22 V 4.4 V 304 nC - 55 C + 200 C 994 W Enhancement AEC-Q100
STMicroelectronics SCT012HU90G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 600
Mult.: 600
: 600

STMicroelectronics SCT019H120G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

AEC-Q100
STMicroelectronics SCT040H65G3-7
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

STMicroelectronics SCT040W65G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 600
Mult.: 600

AEC-Q100
STMicroelectronics SCT055H65G3-7
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

STMicroelectronics SCT055H65G3AG
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

AEC-Q100