Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit

Renesas Electronics RTDACHB0000RS-MF-1 Evaluation Kit supports flexible experimentation with gallium nitride (GaN) bidirectional switch (BDS) modulation and operation. This kit offers GaN BDS (TP65B110HRU), MCUs, and an OpAmp. The RTDACHB0000RS-MF-1 provides a half-bridge GaN configuration that serves as a building block for multiple power topologies. This kit offers multiple options to drive the HB, including MCU-based PWM generation and user-supplied PWM signals. The Renesas Electronics RTDACHB0000RS-MF-1 kit features onboard AC zero‑cross detection and ZVS soft‑switching operation.

Features

Half-bridge BDS GaN configuration
Onboard AC zero-cross detection
Key components
- GaN BDS (TP65B110HRU)
- MCUs
- OpAmp

Flexible platform to experience GaN BDS modulation and operation
ZVS soft switching operation
Multiple options to drive the HB
- MCU-based PWM generation
- User-supplied PWM signals