GCMS080B120S1-E1

SemiQ
148-GCMS080B120S1-E1
GCMS080B120S1-E1

Mfr.:

Description:
Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227

Datasheet:
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Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: Discrete Semiconductor Modules
RoHS:  
REACH - SVHC:
MOSFET-SiC SBD Modules
COPACK Power Module
SiC
1.5 V
1.2 kV
- 10 V, + 25 V
Screw Mount
SOT-227-4
- 55 C
+ 175 C
Tube
Brand: SemiQ
Configuration: Single
Fall Time: 14 ns
Id - Continuous Drain Current: 30 A
Pd - Power Dissipation: 142 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 77 mOhms
Rise Time: 4 ns
Factory Pack Quantity: 10
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 9 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2 V
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.

In Stock: 399

Stock:
399 Can Ship Immediately
Minimum: 1   Multiples: 1
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥4,900 ¥4,900
¥3,612.7 ¥36,127
¥3,239 ¥323,900
¥3,137.6 ¥1,568,800
1,000 Quote

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