TJ20S04M3L,LXHQ
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757-TJ20S04M3L,LXHQ
TJ20S04M3L,LXHQ
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詳細：
MOSFET 41W 1MHz Automotive; AEC-Q101
MOSFET 41W 1MHz Automotive; AEC-Q101
データシート:
在庫: 8,705
-
在庫：
-
8,705 すぐに出荷可能予期しないエラーが発生しました。後でもう一度お試しください。
価格 (JPY)
| 数量 | ユニット価格 |
合計 額
|
|---|---|---|
| ¥236.8 | ¥237 | |
| ¥149.8 | ¥1,498 | |
| ¥99.5 | ¥9,950 | |
| ¥77.9 | ¥38,950 | |
| ¥71 | ¥71,000 | |
| 完全リール（2000の倍数で注文） | ||
| ¥64.2 | ¥128,400 | |
| ¥57.9 | ¥231,600 | |
| ¥55 | ¥1,320,000 | |
データシート
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2