TJ60S04M3L,LXHQ
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757-TJ60S04M3L,LXHQ
TJ60S04M3L,LXHQ
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詳細：
MOSFET 90W 1MHz Automotive; AEC-Q101
MOSFET 90W 1MHz Automotive; AEC-Q101
データシート:
在庫: 2,614
-
在庫：
-
2,614 すぐに出荷可能予期しないエラーが発生しました。後でもう一度お試しください。
-
工場リードタイム：
-
11 週間 表示されている時間を超える工場生産予定時間。
価格 (JPY)
| 数量 | ユニット価格 |
合計 額
|
|---|---|---|
| ¥273.6 | ¥274 | |
| ¥193.6 | ¥1,936 | |
| ¥133.4 | ¥13,340 | |
| ¥106.9 | ¥53,450 | |
| ¥98.1 | ¥98,100 | |
| 完全リール（2000の倍数で注文） | ||
| ¥87.8 | ¥175,600 | |
| ¥81.6 | ¥326,400 | |
| 24,000 | 見積り | |
データシート
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2