TJ80S04M3L,LXHQ
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製品仕様をご覧ください
製品仕様をご覧ください
757-TJ80S04M3L,LXHQ
TJ80S04M3L,LXHQ
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詳細：
MOSFET 100W 1MHz Automotive; AEC-Q101
MOSFET 100W 1MHz Automotive; AEC-Q101
データシート:
在庫: 4,116
-
在庫：
-
4,116 すぐに出荷可能予期しないエラーが発生しました。後でもう一度お試しください。
価格 (JPY)
| 数量 | ユニット価格 |
合計 額
|
|---|---|---|
| ¥313.6 | ¥314 | |
| ¥222.4 | ¥2,224 | |
| ¥150.9 | ¥15,090 | |
| ¥121.4 | ¥60,700 | |
| ¥113 | ¥113,000 | |
| 完全リール（2000の倍数で注文） | ||
| ¥95.2 | ¥190,400 | |
| ¥95 | ¥950,000 | |
データシート
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2