TK1R4S04PB,LXHQ
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詳細:
MOSFET 180W 1MHz Automotive; AEC-Q101
在庫: 26,116
-
在庫:
-
26,116 すぐに出荷可能予期しないエラーが発生しました。後でもう一度お試しください。
価格 (JPY)
| 数量 | ユニット価格 |
合計 額
|
|---|---|---|
| ¥430.4 | ¥430 | |
| ¥278.4 | ¥2,784 | |
| ¥192 | ¥19,200 | |
| ¥154.2 | ¥77,100 | |
| ¥144 | ¥144,000 | |
| 完全リール(2000の倍数で注文) | ||
| ¥144 | ¥288,000 | |
データシート
Application Notes
- Basics of Operational Amplifiers and Comparators
- Designing of Low Power Op Amps for Dust Sensor
- Impacts of the dv/dt Rate on MOSFETs
- Low-Noise CMOS Operational Amplifider Ideal for Sensor Signal Amplification
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Signal Gain and Noise Gain of the Op-Amp
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
日本

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2