WNSC5D16650CJ6Q

Name: WeEn Semiconductors WNSC5D16650CJ6Q
Brand: WeEn Semiconductors
SKU: 771-WNSC5D16650CJ6Q
Price: 164 JPY
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser #:

771-WNSC5D16650CJ6Q

Mfr. #:

WNSC5D16650CJ6Q

Mfr.:

WeEn Semiconductors

Description:

SiC Schottky Diodes WNSC5D16650CJ/SOT1293/STANDARD MARKING * HORIZONTAL, RAIL PACK

Datasheet:

WNSC5D16650CJ6Q Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about WeEn Semiconductors WNSC5D16650CJ6Q

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	WeEn Semiconductors
Product Category:	SiC Schottky Diodes
RoHS:
Package / Case:	TO3PF-3
Configuration:	Common Cathode
If - Forward Current:	16 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.45 V
Ifsm - Forward Surge Current:	40 A
Ir - Reverse Current:	40 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	WeEn Semiconductors
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	480
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Part # Aliases:	934072973127

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

WNSC5D16650CJ6Q Datasheet (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

WNSC2D16650CJ & WNSC2D20650CJ SiC Schottky Diodes

WeEn Semiconductors WNSC2D16650CJ and WNSC2D20650CJ Silicon Carbide (SiC) Schottky Diodes are 650V devices optimized for high-frequency switched-mode power supplies. SiC devices provide many advantages over silicon, including no reverse recovery current, temperature-independent switching, and excellent thermal performance. These features result in higher efficiency, faster-operating frequency, higher power density, lower EMI, and reduced system size and cost. These diodes feature extremely fast reverse recovery time, reduced losses in associated MOSFET, and low cooling requirements.