|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
¥3,715.2
-
664在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R012M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
664在庫
|
|
|
¥3,715.2
|
|
|
¥3,040
|
|
|
¥2,684.8
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
¥2,889.6
-
706在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R017M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
706在庫
|
|
|
¥2,889.6
|
|
|
¥2,313.6
|
|
|
¥2,000
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
¥2,116.8
-
683在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R026M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
683在庫
|
|
|
¥2,116.8
|
|
|
¥1,580.8
|
|
|
¥1,366.4
|
|
|
¥1,294.4
|
|
|
¥1,099.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥1,776
-
959在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R034M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
959在庫
|
|
|
¥1,776
|
|
|
¥1,388.8
|
|
|
¥1,156.8
|
|
|
¥1,032
|
|
|
¥875.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
¥1,660.8
-
967在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R040M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
967在庫
|
|
|
¥1,660.8
|
|
|
¥1,299.2
|
|
|
¥1,083.2
|
|
|
¥964.8
|
|
|
¥859.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
¥1,470.4
-
858在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R053M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
858在庫
|
|
|
¥1,470.4
|
|
|
¥1,094.4
|
|
|
¥912
|
|
|
¥812.8
|
|
|
¥723.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
¥1,276.8
-
556在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R078M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
556在庫
|
|
|
¥1,276.8
|
|
|
¥900.8
|
|
|
¥750.4
|
|
|
¥668.8
|
|
|
¥595.2
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
¥2,465.6
-
13在庫
-
1,680取寄中
-
新製品
|
Mouser 部品番号
726-IMZC120R022M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
13在庫
1,680取寄中
取寄中:
720 予想2026/04/23
960 予想2026/04/30
|
|
|
¥2,465.6
|
|
|
¥1,908.8
|
|
|
¥1,649.6
|
|
|
¥1,648
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
日本