すべての結果 (1,401)

MOSFET Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive)

MOSFET Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive)

MOSFET -100V 4.5A, Dual Pch+Pch, SOP8, Power MOSFET

MOSFET 100V 8A Dual Nch+Nch, SOP8, Power MOSFET

MOSFET 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET

ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera

ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI

ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI

ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe

ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe

ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe

ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI