AFGB30T65RQDN

onsemi
863-AFGB30T65RQDN
AFGB30T65RQDN

Mfr.:

Description:
IGBTs 650V/30A FS4 SCR IGBT D2PAK AUTOMOTIVE

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
Si
D2PAK-3
SMD/SMT
Single
650 V
1.58 V
20 V, 30 V
68 A
235.48 W
- 55 C
+ 175 C
AFGB30T65RQDN
Reel
Cut Tape
Brand: onsemi
Product Type: IGBTs
Factory Pack Quantity: 800
Subcategory: Transistors
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Attributes selected: 0

Compliance Codes
JPHTS:
854129000
CAHTS:
8541290000
USHTS:
8541290055
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

AFGB30T65RQDN IGBT

onsemi AFGB30T65RQDN Insulated Gate Bipolar Transistor (IGBT) offers the optimum performance for automotive applications. This IGBT features high current capability, fast switching, high input impedance, and tightened parameter distribution. The AFGB30T65RQDN IGBT is short circuit rated and offers a high figure of merit with low conduction and switching losses. This IGBT is AEC-Q101 qualified, Pb-free, and RoHS compliant. Typical applications include the E-compressor for HEV/EV and the PTC Heater for HEV/EV.

In Stock: 666

Stock:
666 Can Ship Immediately
Factory Lead-Time:
23 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 67
Unit Price:
¥-
Ext. Price:
¥-
Est. Tariff:

Pricing (JPY)

Qty. Unit Price
Ext. Price
¥777.3 ¥777
¥509.9 ¥5,099
Full Reel (Order in multiples of 800)
¥509.9 ¥407,920