TK55S10N1,LQ
画像はあくまで参考です
製品仕様をご覧ください
製品仕様をご覧ください
757-TK55S10N1LQ
TK55S10N1,LQ
メーカ：
詳細：
MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK
MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK
データシート:
在庫: 1,560
-
在庫：
-
1,560 すぐに出荷可能予期しないエラーが発生しました。後でもう一度お試しください。
-
工場リードタイム：
-
20 週間 表示されている時間を超える工場生産予定時間。
価格 (JPY)
データシート
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Tips for Selecting Level Shifters (Voltage Translation ICs)
Models
Product Catalogs
Test/Quality Data
- JPHTS:
- 854129000
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 8541299900
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2