SCTWA70N120G2V-4

Name: STMicroelectronics SCTWA70N120G2V-4
Brand: STMicroelectronics
SKU: 511-SCTWA70N120G2V-4
Price: 5750 JPY
Availability: InStock

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See Product Specifications

Mouser #:

511-SCTWA70N120G2V-4

Mfr. #:

SCTWA70N120G2V-4

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCTWA70N120G2V-4 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	HIP247-4
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	91 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	2.45 V
Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	547 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	18 ns
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	9 ns
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	15.5 ns