|
|
MOSFET -100V 4.5A, Dual Pch+Pch, SOP8, Power MOSFET
- SH8JE5TB1
- ROHM Semiconductor
-
1:
¥480
-
1,484在庫
|
Mouser 部品番号
755-SH8JE5TB1
|
ROHM Semiconductor
|
MOSFET -100V 4.5A, Dual Pch+Pch, SOP8, Power MOSFET
|
|
1,484在庫
|
|
|
¥480
|
|
|
¥312
|
|
|
¥216
|
|
|
¥179.2
|
|
|
¥172.8
|
|
|
¥168
|
|
最低： 1
複数： 1
|
|
|
|
|
MOSFET SOP8 100V 4.5A N-CH MOSFET
- SH8KE6TB1
- ROHM Semiconductor
-
1:
¥382.4
-
3,071在庫
|
Mouser 部品番号
755-SH8KE6TB1
|
ROHM Semiconductor
|
MOSFET SOP8 100V 4.5A N-CH MOSFET
|
|
3,071在庫
|
|
|
¥382.4
|
|
|
¥246.4
|
|
|
¥168
|
|
|
¥134.2
|
|
|
¥127.8
|
|
|
¥122.7
|
|
最低： 1
複数： 1
|
|
|
|
|
MOSFET 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
- SH8KE7TB1
- ROHM Semiconductor
-
1:
¥451.2
-
4,733在庫
|
Mouser 部品番号
755-SH8KE7TB1
|
ROHM Semiconductor
|
MOSFET 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
|
|
4,733在庫
|
|
|
¥451.2
|
|
|
¥292.8
|
|
|
¥201.6
|
|
|
¥164.8
|
|
|
¥157.9
|
|
|
¥153.9
|
|
最低： 1
複数： 1
|
|
|
|
|
MOSFET 100V 4.5A Dual Nch+Pch, SOP8, Power MOSFET
- SH8ME5TB1
- ROHM Semiconductor
-
1:
¥409.6
-
1,718在庫
|
Mouser 部品番号
755-SH8ME5TB1
|
ROHM Semiconductor
|
MOSFET 100V 4.5A Dual Nch+Pch, SOP8, Power MOSFET
|
|
1,718在庫
|
|
|
¥409.6
|
|
|
¥264
|
|
|
¥180.8
|
|
|
¥145.1
|
|
|
¥137
|
|
|
¥134.7
|
|
最低： 1
複数： 1
|
|
|
|
|
MOSFET 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET
- UT6KE5TCR
- ROHM Semiconductor
-
1:
¥148.8
-
14,502在庫
|
Mouser 部品番号
755-UT6KE5TCR
|
ROHM Semiconductor
|
MOSFET 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET
|
|
14,502在庫
|
|
|
¥148.8
|
|
|
¥93.1
|
|
|
¥60.6
|
|
|
¥46.7
|
|
|
¥36.2
|
|
|
表示
|
|
|
¥42.1
|
|
|
¥33.4
|
|
最低： 1
複数： 1
|
|
|
|
|
MOSFET 100V 2.0A/1.0A, Dual Nch+Pch, DFN2020-8D, Power MOSFET
- UT6ME5TCR
- ROHM Semiconductor
-
1:
¥75.2
-
17,088在庫
|
Mouser 部品番号
755-UT6ME5TCR
|
ROHM Semiconductor
|
MOSFET 100V 2.0A/1.0A, Dual Nch+Pch, DFN2020-8D, Power MOSFET
|
|
17,088在庫
|
|
|
¥75.2
|
|
|
¥47
|
|
|
¥37.9
|
|
|
¥36.2
|
|
|
¥32.6
|
|
|
表示
|
|
|
¥34.6
|
|
|
¥32.5
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
- YQ10RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥294.4
-
7,353在庫
|
Mouser 部品番号
755-YQ10RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
|
|
7,353在庫
|
|
|
¥294.4
|
|
|
¥206.4
|
|
|
¥144.6
|
|
|
¥114.9
|
|
|
表示
|
|
|
¥102.1
|
|
|
¥107.2
|
|
|
¥103.5
|
|
|
¥102.1
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
- YQ10RSM10SDTL1
- ROHM Semiconductor
-
1:
¥238.4
-
7,594在庫
|
Mouser 部品番号
755-YQ10RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
|
|
7,594在庫
|
|
|
¥238.4
|
|
|
¥161.6
|
|
|
¥125.4
|
|
|
¥102.9
|
|
|
表示
|
|
|
¥85.1
|
|
|
¥91.2
|
|
|
¥88.5
|
|
|
¥85.1
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
- YQ12RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥337.6
-
3,980在庫
|
Mouser 部品番号
755-YQ12RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
|
|
3,980在庫
|
|
|
¥337.6
|
|
|
¥201.6
|
|
|
¥157.8
|
|
|
¥125.9
|
|
|
表示
|
|
|
¥113.6
|
|
|
¥119.5
|
|
|
¥115.4
|
|
|
¥113.6
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
- YQ12RSM10SDTL1
- ROHM Semiconductor
-
1:
¥273.6
-
3,668在庫
|
Mouser 部品番号
755-YQ12RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 12A SM SKY BARRI
|
|
3,668在庫
|
|
|
¥273.6
|
|
|
¥193.6
|
|
|
¥136.5
|
|
|
¥108.2
|
|
|
表示
|
|
|
¥94.7
|
|
|
¥99.5
|
|
|
¥96.2
|
|
|
¥94.7
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
- YQ15RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥329.6
-
5,672在庫
|
Mouser 部品番号
755-YQ15RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
|
|
5,672在庫
|
|
|
¥329.6
|
|
|
¥208
|
|
|
¥142.7
|
|
|
¥129.8
|
|
|
表示
|
|
|
¥118.4
|
|
|
¥123.4
|
|
|
¥118.6
|
|
|
¥118.4
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
- YQ15RSM10SDTL1
- ROHM Semiconductor
-
1:
¥299.2
-
4,095在庫
|
Mouser 部品番号
755-YQ15RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 15A SM SKY BARRI
|
|
4,095在庫
|
|
|
¥299.2
|
|
|
¥180.8
|
|
|
¥123.2
|
|
|
¥111.8
|
|
|
表示
|
|
|
¥98.6
|
|
|
¥103.7
|
|
|
¥100
|
|
|
¥98.6
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20BGE10SDTL
- ROHM Semiconductor
-
1:
¥267.2
-
4,820在庫
|
Mouser 部品番号
755-YQ20BGE10SDTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
4,820在庫
|
|
|
¥267.2
|
|
|
¥190.4
|
|
|
¥134.1
|
|
|
¥106.2
|
|
|
¥97.4
|
|
|
¥92.6
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10CDFHTL
- ROHM Semiconductor
-
1:
¥417.6
-
1,900在庫
|
Mouser 部品番号
755-YQ20NL10CDFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
1,900在庫
|
|
|
¥417.6
|
|
|
¥288
|
|
|
¥203.2
|
|
|
¥196.8
|
|
|
¥184
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20NL10CDTL
- ROHM Semiconductor
-
1:
¥409.6
-
1,970在庫
|
Mouser 部品番号
755-YQ20NL10CDTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
1,970在庫
|
|
|
¥409.6
|
|
|
¥251.2
|
|
|
¥192
|
|
|
¥163.2
|
|
|
¥159.4
|
|
|
¥152.3
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
- YQ20NL10SEFHTL
- ROHM Semiconductor
-
1:
¥456
-
2,000在庫
|
Mouser 部品番号
755-YQ20NL10SEFHTL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
|
|
2,000在庫
|
|
|
¥456
|
|
|
¥294.4
|
|
|
¥211.2
|
|
|
¥176
|
|
|
¥152.3
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ20NL10SETL
- ROHM Semiconductor
-
1:
¥382.4
-
1,988在庫
|
Mouser 部品番号
755-YQ20NL10SETL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
1,988在庫
|
|
|
¥382.4
|
|
|
¥219.2
|
|
|
¥150.9
|
|
|
¥137.3
|
|
|
¥126.9
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
- YQ30NL10SETL
- ROHM Semiconductor
-
1:
¥355.2
-
1,908在庫
|
Mouser 部品番号
755-YQ30NL10SETL
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
|
|
1,908在庫
|
|
|
¥355.2
|
|
|
¥244.8
|
|
|
¥171.2
|
|
|
¥157.9
|
|
|
¥157.8
|
|
|
¥147.5
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI
- YQ3RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥228.8
-
3,852在庫
|
Mouser 部品番号
755-YQ3RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 3A SM SKY BARRI
|
|
3,852在庫
|
|
|
¥228.8
|
|
|
¥153.1
|
|
|
¥109.9
|
|
|
¥87.2
|
|
|
表示
|
|
|
¥72.8
|
|
|
¥77.9
|
|
|
¥75.5
|
|
|
¥72.8
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
- YQ5RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥219.2
-
3,900在庫
|
Mouser 部品番号
755-YQ5RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
|
|
3,900在庫
|
|
|
¥219.2
|
|
|
¥147.8
|
|
|
¥105.9
|
|
|
¥84.3
|
|
|
表示
|
|
|
¥69.8
|
|
|
¥74.7
|
|
|
¥72.5
|
|
|
¥69.8
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
- YQ5RSM10SDTL1
- ROHM Semiconductor
-
1:
¥195.2
-
3,955在庫
|
Mouser 部品番号
755-YQ5RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 5A SM SKY BARRI
|
|
3,955在庫
|
|
|
¥195.2
|
|
|
¥128.3
|
|
|
¥90.2
|
|
|
¥73
|
|
|
表示
|
|
|
¥58.4
|
|
|
¥62.7
|
|
|
¥61.4
|
|
|
¥58.4
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 8A SM SKY BARRI
- YQ8RSM10SDTFTL1
- ROHM Semiconductor
-
1:
¥308.8
-
3,867在庫
|
Mouser 部品番号
755-YQ8RSM10SDTFTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 8A SM SKY BARRI
|
|
3,867在庫
|
|
|
¥308.8
|
|
|
¥196.8
|
|
|
¥133.4
|
|
|
¥113.1
|
|
|
表示
|
|
|
¥91.7
|
|
|
¥96.5
|
|
|
¥93.1
|
|
|
¥91.7
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 100V 8A SM SKY BARRI
- YQ8RSM10SDTL1
- ROHM Semiconductor
-
1:
¥240
-
3,905在庫
|
Mouser 部品番号
755-YQ8RSM10SDTL1
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 100V 8A SM SKY BARRI
|
|
3,905在庫
|
|
|
¥240
|
|
|
¥161.6
|
|
|
¥115.2
|
|
|
¥91
|
|
|
表示
|
|
|
¥76.6
|
|
|
¥82.1
|
|
|
¥79.7
|
|
|
¥76.6
|
|
最低： 1
複数： 1
|
|
|
|
|
MOSFET Transistor, MOSFET Pch, -60V(Vdss), -70A(Id), (4.5V, 6.0V Drive)
- RD3L07BATTL1
- ROHM Semiconductor
-
1:
¥496
-
37,371在庫
|
Mouser 部品番号
755-RD3L07BATTL1
|
ROHM Semiconductor
|
MOSFET Transistor, MOSFET Pch, -60V(Vdss), -70A(Id), (4.5V, 6.0V Drive)
|
|
37,371在庫
|
|
|
¥496
|
|
|
¥321.6
|
|
|
¥224
|
|
|
¥188.8
|
|
|
¥176
|
|
|
¥176
|
|
最低： 1
複数： 1
|
|
|
|
|
ショットキーダイオードおよび整流器 RECT 20V 2A SM SKY BARRI
- RB061QS-20T18R
- ROHM Semiconductor
-
1:
¥112
-
2,692在庫
|
Mouser 部品番号
755-RB061QS-20T18R
|
ROHM Semiconductor
|
ショットキーダイオードおよび整流器 RECT 20V 2A SM SKY BARRI
|
|
2,692在庫
|
|
|
¥112
|
|
|
¥69.1
|
|
|
¥44.5
|
|
|
¥33.8
|
|
|
表示
|
|
|
¥22.2
|
|
|
¥27.5
|
|
|
¥24.3
|
|
|
¥22.4
|
|
|
¥22.2
|
|
最低： 1
複数： 1
|
|
|
日本
