|
|
ダーリントントランジスタ Eight NPN Array
- ULQ2801A
- STMicroelectronics
-
1:
¥965
-
754在庫
|
Mouser 部品番号
511-ULQ2801A
|
STMicroelectronics
|
ダーリントントランジスタ Eight NPN Array
|
|
754在庫
|
|
|
¥965
|
|
|
¥644.5
|
|
|
¥461.8
|
|
|
¥383.7
|
|
|
表示
|
|
|
¥357.1
|
|
|
¥342.2
|
|
最低: 1
複数: 1
|
|
Darlington Transistors
|
|
Through Hole
|
PDIP-18
|
NPN
|
|
|
|
MOSFET N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
- ST8L60N065DM9
- STMicroelectronics
-
1:
¥1,171
-
155在庫
-
新製品
|
Mouser 部品番号
511-ST8L60N065DM9
新製品
|
STMicroelectronics
|
MOSFET N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
|
|
155在庫
|
|
|
¥1,171
|
|
|
¥624.5
|
|
|
¥571.4
|
|
|
¥539.8
|
|
|
¥509.9
|
|
|
¥509.9
|
|
最低: 1
複数: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
¥426.9
-
997在庫
-
新製品
|
Mouser 部品番号
511-STF80N1K1K6
新製品
|
STMicroelectronics
|
MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
997在庫
|
|
|
¥426.9
|
|
|
¥209.3
|
|
|
¥186
|
|
|
¥150
|
|
|
表示
|
|
|
¥141.5
|
|
|
¥135.4
|
|
|
¥130.2
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
¥782.3
-
540在庫
-
新製品
|
Mouser 部品番号
511-STGHU30M65DF2AG
新製品
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540在庫
|
|
|
¥782.3
|
|
|
¥516.6
|
|
|
¥365.4
|
|
|
¥342.2
|
|
|
¥317.3
|
|
|
¥295.7
|
|
最低: 1
複数: 1
:
600
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
¥737.5
-
540在庫
-
600予想2026/10/23
-
新製品
|
Mouser 部品番号
511-STGWA30M65DF2AG
新製品
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540在庫
600予想2026/10/23
|
|
|
¥737.5
|
|
|
¥506.6
|
|
|
¥377
|
|
|
¥315.6
|
|
|
¥274.1
|
|
最低: 1
複数: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
¥858.7
-
419在庫
-
2,000予想2026/10/09
-
新製品
|
Mouser 部品番号
511-STK615N4F8AG
新製品
|
STMicroelectronics
|
MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
419在庫
2,000予想2026/10/09
|
|
|
¥858.7
|
|
|
¥445.1
|
|
|
¥405.3
|
|
|
¥357.1
|
|
|
¥335.5
|
|
最低: 1
複数: 1
:
2,000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
¥372.1
-
399在庫
-
3,000予想2026/09/23
-
新製品
|
Mouser 部品番号
511-STL160N6LF7
新製品
|
STMicroelectronics
|
MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
399在庫
3,000予想2026/09/23
|
|
|
¥372.1
|
|
|
¥181
|
|
|
¥161.3
|
|
|
¥128.4
|
|
|
¥119.9
|
|
|
¥107.8
|
|
最低: 1
複数: 1
:
3,000
|
|
MOSFETs
|
|
|
|
|
|
|
|
バイポーラトランジスタ - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
¥16,299.4
-
101在庫
|
Mouser 部品番号
511-2N2222AUB1
|
STMicroelectronics
|
バイポーラトランジスタ - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
101在庫
|
|
|
¥16,299.4
|
|
|
¥15,326
|
|
|
¥13,010.6
|
|
|
見積り
|
|
|
見積り
|
|
最低: 1
複数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
バイポーラトランジスタ - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
¥19,656.3
-
21在庫
|
Mouser 部品番号
511-2N2907AUB1
|
STMicroelectronics
|
バイポーラトランジスタ - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21在庫
|
|
最低: 1
複数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
バイポーラトランジスタ - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
¥38,905.6
-
13在庫
|
Mouser 部品番号
511-2N5154S1
|
STMicroelectronics
|
バイポーラトランジスタ - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
13在庫
|
|
最低: 1
複数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
MOSFETモジュール ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A
- A2U8M12W3-FC
- STMicroelectronics
-
1:
¥29,396.4
-
18在庫
|
Mouser 部品番号
511-A2U8M12W3-FC
|
STMicroelectronics
|
MOSFETモジュール ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A
|
|
18在庫
|
|
最低: 1
複数: 1
|
|
MOSFET Modules
|
SiC
|
Press Fit
|
56.7 mm x 48 mm
|
N-Channel
|
|
|
|
IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
¥1,189.3
-
515在庫
|
Mouser 部品番号
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
515在庫
|
|
|
¥1,189.3
|
|
|
¥802.3
|
|
|
¥581.4
|
|
|
¥574.7
|
|
|
¥521.6
|
|
最低: 1
複数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
¥3,687.4
-
610在庫
|
Mouser 部品番号
511-SCT012W90G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
610在庫
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥4,280.4
-
540在庫
|
Mouser 部品番号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
540在庫
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥3,102.7
-
448在庫
|
Mouser 部品番号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
448在庫
|
|
|
¥3,102.7
|
|
|
¥2,016.5
|
|
|
¥1,876.9
|
|
|
¥1,662.7
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥3,360.2
-
256在庫
-
600予想2027/08/27
|
Mouser 部品番号
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
256在庫
600予想2027/08/27
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥3,147.6
-
238在庫
-
600予想2027/03/12
|
Mouser 部品番号
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
238在庫
600予想2027/03/12
|
|
|
¥3,147.6
|
|
|
¥1,958.3
|
|
|
¥1,837.1
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥2,260.6
-
587在庫
-
1,000予想2027/05/21
|
Mouser 部品番号
511-SCT027H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
587在庫
1,000予想2027/05/21
|
|
|
¥2,260.6
|
|
|
¥1,285.6
|
|
|
¥1,282.3
|
|
|
¥1,212.5
|
|
最低: 1
複数: 1
:
1,000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥2,348.7
-
246在庫
|
Mouser 部品番号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
246在庫
|
|
|
¥2,348.7
|
|
|
¥1,573
|
|
|
¥1,458.4
|
|
|
¥1,240.8
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥1,931.7
-
467在庫
|
Mouser 部品番号
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
467在庫
|
|
|
¥1,931.7
|
|
|
¥1,058.1
|
|
|
¥986.6
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥2,229.1
-
481在庫
|
Mouser 部品番号
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481在庫
|
|
|
¥2,229.1
|
|
|
¥1,488.3
|
|
|
¥1,382
|
|
|
¥1,190.9
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥1,519.8
-
1,404在庫
|
Mouser 部品番号
511-SCT055TO65G3
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,404在庫
|
|
|
¥1,519.8
|
|
|
¥832.2
|
|
|
¥779
|
|
|
¥720.9
|
|
|
¥720.9
|
|
最低: 1
複数: 1
:
1,800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
- STF80N240K6
- STMicroelectronics
-
1:
¥1,249.1
-
1,008在庫
|
Mouser 部品番号
511-STF80N240K6
|
STMicroelectronics
|
MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
|
|
1,008在庫
|
|
|
¥1,249.1
|
|
|
¥714.2
|
|
|
¥601.3
|
|
|
¥534.8
|
|
|
¥480
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBT Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
- STGSH80HB65DAG
- STMicroelectronics
-
1:
¥3,418.3
-
189在庫
|
Mouser 部品番号
511-STGSH80HB65DAG
|
STMicroelectronics
|
IGBT Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
|
|
189在庫
|
|
|
¥3,418.3
|
|
|
¥2,443.3
|
|
|
¥2,092.9
|
|
|
¥2,092.9
|
|
最低: 1
複数: 1
:
200
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
ACEPACK-5
|
|
|
|
|
MOSFET Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
- STH12N120K5-2AG
- STMicroelectronics
-
1:
¥2,149.3
-
269在庫
-
1,000予想2026/09/23
|
Mouser 部品番号
511-STH12N120K5-2AG
|
STMicroelectronics
|
MOSFET Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
|
|
269在庫
1,000予想2026/09/23
|
|
|
¥2,149.3
|
|
|
¥1,616.2
|
|
|
¥1,347.1
|
|
|
¥1,199.2
|
|
|
¥1,121.2
|
|
最低: 1
複数: 1
:
1,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|