Results: 40
Select Image Part # Mfr. Description Datasheet Availability Pricing (JPY) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
IXYS MOSFETs TO3P 1.5KV 3A N-CH HIVOLT Non-Stocked Lead-Time 37 Weeks
¥1,945
¥1,323.8
¥1,102.9
¥1,051.4
Min.: 1
Mult.: 1
Si Through Hole TO-3P-3 N-Channel 1.5 kV 1.83 A 7.3 Ohms 30 V 2.5 V - 55 C + 150 C 73 W Tube
IXYS MOSFETs TO268 1.5KV 4A N-CH HIVOLT Non-Stocked Lead-Time 26 Weeks
¥5,441.4
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.5 kV 4 A 6 Ohms 30 V 2.5 V 375 nC - 55 C + 150 C 280 W Enhancement Tube
IXYS MOSFETs 0.5 Amps 1000V Non-Stocked
Cut Tape
¥619.6
¥405.3
Reel
¥405.3
¥294
¥245.8
Min.: 1
Mult.: 1
: 75
Si Through Hole TO-251-3 N-Channel 1 Channel 1 kV 750 mA 17 Ohms 30 V - 55 C + 150 C 40 W Reel, Cut Tape

IXYS MOSFETs 24 Amps 1000V Non-Stocked Lead-Time 28 Weeks
¥4,390
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 24 A 400 mOhms 20 V 5.5 V 267 nC - 55 C + 150 C 568 W Enhancement Tube
IXYS MOSFETs 2 Amps 1000V 7 Rds Non-Stocked
¥691
¥614.6
¥553.1
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 2 A 7 Ohms 20 V - 55 C + 150 C 100 W Enhancement Tube

IXYS MOSFETs 13 Amps 800V Non-Stocked
¥1,330.5
¥1,184.3
¥1,107.9
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 800 mOhms 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 14 Amps 800V 0.7 Rds Non-Stocked
¥2,081.2
¥1,732.4
¥1,544.7
¥1,443.4
Min.: 30
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 14 A 700 mOhms 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 20 Amps 600V 0.35 Rds Non-Stocked Lead-Time 28 Weeks
¥1,426.8
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 350 mOhms 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 40 Amps 300V 0.085 Rds Non-Stocked Lead-Time 22 Weeks
¥3,760.5
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 40 A 85 mOhms 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 5 Amps 1000V 2 Rds Non-Stocked
¥1,388.6
¥1,237.4
¥1,156.1
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 5 A 2 Ohms 20 V - 55 C + 150 C 180 W Enhancement Tube

IXYS MOSFETs 67 Amps 100V 0.025 Rds Non-Stocked
¥1,709.2
¥1,421.8
¥1,267.3
¥1,202.6
Min.: 30
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 67 A 25 mOhms 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs STD N-CHNL PWR MOSFE 100V, 75A Non-Stocked Lead-Time 26 Weeks
¥4,954.8
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 75 A 20 mOhms 20 V - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFETs 33 Amps 500V 0.17 Rds Non-Stocked
¥2,267.3
¥2,146
Min.: 300
Mult.: 300
Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 33 A 170 mOhms 20 V - 55 C + 150 C 416 W Enhancement Tube
IXYS MOSFETs 1.5 Amps 1000V 11 Rds Non-Stocked Lead-Time 38 Weeks
¥480
¥355.5
Min.: 300
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 1.5 A 11 Ohms 30 V - 55 C + 150 C 54 W Enhancement Tube
IXYS MOSFETs 75 Amps 100V 0.02 Rds Non-Stocked
¥4,526.2
¥3,911.7
¥3,704
Min.: 30
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 1 Channel 100 V 75 A 20 mOhms 20 V - 55 C + 150 C 300 W Enhancement Tube