Advanced Energy 最新のパワーマネージメント IC
パワーマネージメント ICのタイプ
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Advanced Energy AIH03ZPFC 1100W Half-Brick PFC Converters
05/05/2026
05/05/2026
Accepts a wide 90VAC to 264VAC input and presents a unity power factor.
Advanced Energy AIF13WAC 600W AC/DC Converters
01/29/2026
01/29/2026
Offers high efficiency of up to 94% and a wide AC input range in a standard full-brick form factor.
表示: 1~2/2
Texas Instruments TLV612901 Synchronous Boost Converter
10/23/2026
10/23/2026
5.5V, 11A boost converter with integrated bypass mode for single-cell battery-powered systems.
Texas Instruments TPS7B7802-Q1 Dual-Channel LDO Regulator
10/23/2026
10/23/2026
A monolithic high-voltage low-dropout (LDO) regulator with an integrated ADC and I2C interface.
ROHM Semiconductor BM85060FV CRM Totem Pole PFC Controller IC
10/22/2026
10/22/2026
CRM totem-pole PFC controller with burst mode, high-voltage startup, and protection.
ROHM Semiconductor BD16852AEFV-C 3-Phase Brushless Motor Driver
10/20/2026
10/20/2026
Includes a built-in power DMOS FET and is mounted with a 120° commutation sensorless drive.
ROHM Semiconductor BD9B106NF-Z Synchronous Buck DC-DC Converter
10/20/2026
10/20/2026
Single synchronous buck DC-DC converter with built-in low on-resistance power MOSFETs.
ROHM Semiconductor BD6xxM5-C Automotive Low Dropout Regulators
10/20/2026
10/20/2026
Designed for power supplies in automotive applications requiring a direct battery connection.
Diodes Incorporated ZXCT1009 High-Side Current Monitors
10/19/2026
10/19/2026
Accurately measures load current without interrupting the system ground path.
Murata MYRGC075060W31RB/MYRGC075060B31RB DC-DCコンバータ
10/15/2026
10/15/2026
制御 IC とインダクタを統合した 36V・600mA DC‑DC コンバータ。
EPC EPC33110 3-Phase ePower™ Stage IC
09/10/2026
09/10/2026
Co-packaged with integrated gate drivers, level shifters, and bootstraps for compact motor control.
Texas Instruments TPS62A20x-Q1/TPS62A2Nx-Q1 降圧コンバータ
09/09/2026
09/09/2026
1A、2A、3A、4Aの連続出力電流に対応する降圧DC-DCコンバータです。
Infineon Technologies EiceDRIVER™ 2EDL90xG3ゲートドライバ
08/25/2026
08/25/2026
同一プリント基板上で窒化ガリウム(GaN)およびシリコン(Si)のパワー設計を可能にするために設計されています。
表示: 1~25/1289
