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STMicroelectronics SiC MOSFETs

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: ¥3,350.2
5In Stock
600Expected 2/5/2027

Mfr. Part #
SCTW40N120G2VAG

Mouser Part #
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

Learn More

Datasheet

5In Stock

600Expected 2/5/2027

¥3,350.2

¥1,793.9

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A

SCT011H75G3AG
STMicroelectronics
1: ¥4,378.4
988Expected 3/5/2027
New Product

Mfr. Part #
SCT011H75G3AG

Mouser Part #
511-SCT011H75G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A

Datasheet

988Expected 3/5/2027

Cut Tape

¥4,378.4

¥3,504.7

¥3,024.7

¥2,940

Reel

¥2,639.3

Min.: 1
Mult.: 1

: 1,000

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

SCT011HU75G3AG
STMicroelectronics
1: ¥4,562.8
1,200Expected 3/12/2027
New Product

Mfr. Part #
SCT011HU75G3AG

Mouser Part #
511-SCT011HU75G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package

Learn More

Datasheet

1,200Expected 3/12/2027

Cut Tape

¥4,562.8

¥3,504.7

¥3,147.6

Reel

¥2,850.3

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

750 V

110 A

15 mOhms

- 10 V, + 22 V

3.2 V

154 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

SCT016H120G3AG
STMicroelectronics
1: ¥4,147.5
1,985On Order
New Product

Mfr. Part #
SCT016H120G3AG

Mouser Part #
511-SCT016H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Learn More

Datasheet

1,985On Order

Cut Tape

¥4,147.5

¥2,795.5

Reel

¥2,647.6

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

112 A

22 mOhms

- 10 V, + 22 V

3 V

150 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

SCT025H120G3AG
STMicroelectronics
1: ¥3,049.6
1,997Expected 2/26/2027

Mfr. Part #
SCT025H120G3AG

Mouser Part #
511-SCT025H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

1,997Expected 2/26/2027

Cut Tape

¥3,049.6

¥2,164.3

¥1,888.6

¥1,870.3

Reel

¥1,787.2

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

55 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 175 C

375 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: ¥3,655.9
998Expected 1/29/2027

Mfr. Part #
SCT012H90G3AG

Mouser Part #
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Learn More

Datasheet

998Expected 1/29/2027

Cut Tape

¥3,655.9

¥2,622.7

¥2,381.9

¥2,370.2

Reel

¥2,222.4

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

900 V

110 A

12 mOhms

- 18 V, + 18 V

4.2 V

138 nC

- 55 C

+ 175 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SCT027HU65G3AG
STMicroelectronics
1: ¥2,426.7
400Expected 2/5/2027
New Product

Mfr. Part #
SCT027HU65G3AG

Mouser Part #
511-SCT027HU65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Learn More

Datasheet

400Expected 2/5/2027

Cut Tape

¥2,426.7

¥1,848.7

¥1,541.4

Reel

¥1,382

Min.: 1
Mult.: 1

: 600

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

SCT040H120G3AG
STMicroelectronics
1: ¥2,263.9
996Expected 8/31/2026

Mfr. Part #
SCT040H120G3AG

Mouser Part #
511-SCT040H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

Learn More

Datasheet

996Expected 8/31/2026

Cut Tape

¥2,263.9

¥1,579.6

¥1,284

Reel

¥1,197.6

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

SCT040HU120G3AG
STMicroelectronics
1: ¥2,400.1
1,200Expected 1/29/2027
New Product

Mfr. Part #
SCT040HU120G3AG

Mouser Part #
511-SCT040HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

Learn More

Datasheet

1,200Expected 1/29/2027

Cut Tape

¥2,400.1

¥1,783.9

¥1,480

Reel

¥1,293.9

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

40 A

72 mOhms

- 10 V, + 22 V

3 V

54 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: ¥2,268.9
592Expected 8/20/2027

Mfr. Part #
SCT040HU65G3AG

Mouser Part #
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Learn More

Datasheet

592Expected 8/20/2027

Cut Tape

¥2,268.9

¥1,729.1

¥1,440.1

Reel

¥1,284

¥1,214.2

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

H2PAK-2

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: ¥2,247.3
1,800Expected 1/29/2027

Mfr. Part #
SCT055HU65G3AG

Mouser Part #
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

1,800Expected 1/29/2027

Cut Tape

¥2,247.3

¥1,712.5

¥1,426.8

Reel

¥1,270.7

¥1,202.6

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

4.2 V

29 nC

- 55 C

+ 175 C

185 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

SCT070HU120G3AG
STMicroelectronics
1: ¥2,415.1
599Expected 9/28/2026

Mfr. Part #
SCT070HU120G3AG

Mouser Part #
511-SCT070HU120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

Learn More

Datasheet

599Expected 9/28/2026

Cut Tape

¥2,415.1

¥1,699.2

¥1,405.2

Reel

¥1,312.2

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

SCT1000N170
STMicroelectronics
1: ¥1,579.6
600Expected 5/21/2027

Mfr. Part #
SCT1000N170

Mouser Part #
511-SCT1000N170

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

Learn More

Datasheet

600Expected 5/21/2027

¥1,579.6

¥1,079.7

¥898.6

¥667.7

¥652.8

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

1 Channel

1.7 kV

6 A

1 Ohms

- 10 V, + 25 V

2.1 V

14 nC

- 55 C

+ 200 C

120 W

Enhancement

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an

SCT10N120AG
STMicroelectronics
1: ¥1,636.1
1,945On Order

Mfr. Part #
SCT10N120AG

Mouser Part #
511-SCT10N120AG

STMicroelectronics

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an

Learn More

Datasheet

1,945On Order

¥1,636.1

¥882

¥813.9

¥794

Min.: 1
Mult.: 1

Through Hole

1 Channel

1.2 kV

12 A

500 mOhms

- 10 V, + 25 V

3.5 V

22 nC

- 55 C

+ 200 C

150 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

SCT040W120G3-4
STMicroelectronics
1: ¥2,144.4
100On Order

Mfr. Part #
SCT040W120G3-4

Mouser Part #
511-SCT040W120G3-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Learn More

Datasheet

100On Order

¥2,144.4

¥1,438.4

¥1,264

¥1,083

Min.: 1
Mult.: 1

Through Hole

HiP247-4

1 Channel

1.2 kV

40 A

54 mOhms

- 10 V, + 22 V

3.1 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A

SCT014HU65G3AG
STMicroelectronics
600: ¥2,076.3
Non-Stocked Lead-Time 32 Weeks
New Product

Mfr. Part #
SCT014HU65G3AG

Mouser Part #
511-SCT014HU65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A

Datasheet

Non-Stocked Lead-Time 32 Weeks

Reel

¥2,076.3

Min.: 600
Mult.: 600

: 600

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package

SCT014TO65G3
STMicroelectronics
1,800: ¥1,468.3
Non-Stocked Lead-Time 36 Weeks
New Product

Mfr. Part #
SCT014TO65G3

Mouser Part #
511-SCT014TO65G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package

Datasheet

Non-Stocked Lead-Time 36 Weeks

Reel

¥1,468.3

Min.: 1,800
Mult.: 1,800

: 1,800

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3-7
STMicroelectronics
1,000: ¥1,448.4
Non-Stocked Lead-Time 25 Weeks
New Product

Mfr. Part #
SCT018H65G3-7

Mouser Part #
511-SCT018H65G3-7

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

Non-Stocked Lead-Time 25 Weeks

Reel

¥1,448.4

Min.: 1,000
Mult.: 1,000

: 1,000

SMD/SMT

H2PAK-7

1 Channel

650 V

55 A

27 mOhms

- 10 V, 22 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A

SCT018HU65G3AG
STMicroelectronics
1: ¥3,147.6
Non-Stocked Lead-Time 36 Weeks
New Product

Mfr. Part #
SCT018HU65G3AG

Mouser Part #
511-SCT018HU65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A

Datasheet

Non-Stocked Lead-Time 36 Weeks

Cut Tape

¥3,147.6

¥2,423.4

¥2,036.4

Reel

¥1,757.3

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

650 V

60 A

29 mOhms

- 10 V, 22 V

4.2 V

82.5 nC

- 55 C

+ 175 C

388 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A

SCT018W65G3AG
STMicroelectronics
1: ¥2,651
Non-Stocked Lead-Time 25 Weeks
New Product

Mfr. Part #
SCT018W65G3AG

Mouser Part #
511-SCT018W65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A

Datasheet

Non-Stocked Lead-Time 25 Weeks

¥2,651

¥2,066.3

¥1,719.1

¥1,582.9

View

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

650 V

55 A

27 mOhms

- 10 V, 22 V

4.2 V

76 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package

SCT019W120G3-4AG
STMicroelectronics
1: ¥3,313.7
Non-Stocked Lead-Time 36 Weeks
New Product

Mfr. Part #
SCT019W120G3-4AG

Mouser Part #
511-SCT019W120G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package

Datasheet

Non-Stocked Lead-Time 36 Weeks

¥3,313.7

¥2,566.2

¥2,182.6

¥2,099.5

Min.: 1
Mult.: 1

Through Hole

HiP247-4

1 Channel

1.2 kV

90 A

26 mOhms

- 10 V, + 22 V

4.2 V

120 nC

- 55 C

+ 200 C

486 W

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A

SCT020H120G3AG
STMicroelectronics
1: ¥3,283.8
Non-Stocked Lead-Time 25 Weeks
New Product

Mfr. Part #
SCT020H120G3AG

Mouser Part #
511-SCT020H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A

Learn More

Datasheet

Non-Stocked Lead-Time 25 Weeks

Cut Tape

¥3,283.8

¥2,453.3

¥2,121.1

¥2,008.1

Reel

¥1,817.1

View

Min.: 1
Mult.: 1

: 1,000

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4
STMicroelectronics
600: ¥1,759
Non-Stocked Lead-Time 36 Weeks
New Product

Mfr. Part #
SCT025W120G3-4

Mouser Part #
511-SCT025W120G3-4

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Datasheet

Non-Stocked Lead-Time 36 Weeks

¥1,759

Min.: 600
Mult.: 600

Through Hole

HiP247-4

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, 22 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package

SCT027TO65G3
STMicroelectronics
1: ¥2,297.2
Non-Stocked Lead-Time 36 Weeks
New Product

Mfr. Part #
SCT027TO65G3

Mouser Part #
511-SCT027TO65G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package

Datasheet

Non-Stocked Lead-Time 36 Weeks

Cut Tape

¥2,297.2

¥1,767.3

¥1,484.9

¥1,352.1

¥1,274

Reel

¥1,274

Min.: 1
Mult.: 1

: 1,800

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3
STMicroelectronics
600: ¥1,900.2
Non-Stocked Lead-Time 32 Weeks
New Product

Mfr. Part #
SCT040W120G3

Mouser Part #
511-SCT040W120G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Datasheet

Non-Stocked Lead-Time 32 Weeks

¥1,900.2

Min.: 600
Mult.: 600

Through Hole

HiP247-3

1 Channel

1.2 kV

40 A

54 mOhms

- 10 V, 22 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

8.5 mOhms
10.5 mOhms
12 mOhms
15 mOhms
15.8 mOhms
18 mOhms
22 mOhms
26 mOhms
27 mOhms
28 mOhms
29 mOhms
37 mOhms
39.3 mOhms
40 mOhms
54 mOhms
63 mOhms
67 mOhms
72 mOhms
87 mOhms
100 mOhms

14 nC
22 nC
29 nC
31 nC
32 nC
36 nC
37 nC
37.5 nC
39.5 nC
41 nC
42.5 nC
45 nC
48.6 nC
51 nC
54 nC
56 nC
61 nC
73 nC
76 nC
77 nC

120 W
150 W
175 W
185 W
210 W
221 W
223 W
234 W
236 W
240 W
266 W
278 W
288 W
300 W
312 W
313 W
375 W
385 W
388 W
398 W