Everspin Technologies EMD4E001G Spin-Transfer Torque MRAM
Everspin Technologies EMD4E001G Spin-Transfer Torque Magnetic RAM (STT-MRAM) features 1Gb non-volatile ST-DDR4 MRAM with a 64Mb x 16 organization. These devices offer more effective management of I/O streams, allowing storage OEMs to significantly improve the quality of service of their products. The double data rate (DDR) architecture achieves high-speed operation and is an 8n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. Other features include multipurpose register READ and WRITE capability, per-device addressability (PDA), and on-device termination. Everspin Technologies EMD4E001G is compatible with Xilinx FPGA controllers and offers a persistent data buffer in storage and fabric/software accelerators, computational storage, and other applications.
Features
- 64Mb x 16 organization
- Supports most DDR4 features
- 2048-bit page size
- VDD = VDDQ = 1.2V
- VPP = 2.5V
- 0°C to +85°C operating temperature range
- 667MHz clock frequency (fCK)
- On-device termination
- Multipurpose register READ and WRITE capability
- PDA
- Connectivity test
- Burst lengths of 8 addresses
- On-chip DLL aligns DQ, DQS, and DQS transition with CK transition
- All addresses and control inputs are latched on rising edge of clock
- Bit error rate (BER) = 1 x 10-11
- Data retention = 3 months at +70°C
- Cycle endurance = 1 x 1010
- Timing-cycle time
- 1.5ns at CL = 10 (ST-DDR4 1333)
- 1.5ns at CWL = 9 (ST-DDR4 1333)
- 10mm x 13mm 96-ball BGA lead-free package
- RoHS compliant
Applications
- Storage and fabric/software accelerators
- Computational storage
Simplified State Diagram
