Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.
Features
- Based on Navitas’ fourth-generation GeneSiC platform
- Uses TAP architecture to implement multi-step e-field management profile
- Increased long-term reliability and avalanche robustness
- Enhanced current-spreading
- Reduces voltage stress and improves voltage blocking capabilities compared with trench and traditional-planar SiC MOSFETs
- Optimal source contact for superior cell-pitch density
- Improved switching figures of merit
- Lower on-resistance at hot temperatures
- Flexible packaging formats
- Power module, discrete, and KGD formats
- Meets diverse application requirements
- Maximizes system durability and power density
Applications
- AI data centers
- Grid and energy infrastructure
- Industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging
Power MOSFET Technology Comparison
Schematic Comparison
