Micro Commercial Components (MCC) SI3134KU6 Small Signal Dual N-Channel MOSFET
Micro Commercial Components (MCC) SI3134KU6 Small Signal Dual N-Channel MOSFET is a 20V device meticulously designed for high-speed switching. The ultra-compact DFN1010 package only takes up 1mm x 1mm of space while delivering a low input gate charge and ESD-protected gate input up to 2kV. The SI3134KU6 MOSFET leverages trench LV MOSFET technology and MCC reliability to offer users the ideal component for motherboards, charging circuits, automation controls, and more.
Features
- Trench LV MOSFET technology
- Compact 1mm x 1mm, DFN1010 package
- Low gate charge
- 250mΩ RDS(on)
- Ideal for high-speed switching
- Enhanced durability
- Energy-saving design
- Up to 2KV ESD protection (HBM)
- Moisture Sensitivity Level (MSL) 1
- Epoxy meets UL 94V-0 flammability rating
- Halogen-free, Green device
- Lead-free finish
- RoHS-compliant (designated by "P" suffix)
Applications
- Consumer
- Smartphone and tablet power management
- Portable device charging circuits
- Computing
- Motherboard voltage regulation modules
- High-speed computing interface drivers
- Industrial
- Automated machinery control systems
- Industrial sensor interfaces
- Telecommunications - Line drivers for high-speed data transmission
Specifications
- 20V maximum drain-source voltage
- ±10V maximum gate-source voltage
- Maximum continuous drain currents
- 0.75A at +25°C
- 0.47A at +100°C
- 3A maximum pulsed drain current
- 0.42W maximum power dissipation
- 1.2nC gate charge
- 5.7ns fall time
- 5.2ns rise time
- 10.5ns typical turn-off delay time
- 5.4ns typical turn-on delay time
- 300°C/W maximum junction-to-ambient thermal resistance
- -55°C to +150°C operating junction temperature range
Dimensions
Internal Structure & Marking Code
Additional Resources
公開: 2024-04-12
| 更新済み: 2024-04-24