PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs
PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs utilize Trench technology to improve the product characteristics. These MOSFETs feature low drain-source on resistance and 80V drain-source voltage. The PSMxN08NS1 MOSFETs are 100% avalanche-tested, 100% Rg-tested, and lead-free in compliance with EU RoHS 2.0. These MOSFETs are ideal for use in Battery Management Systems (BMSs), Brushless Direct Current (BLDC) motors, SMPS, and telecommunications power systems.
Features
- 100% Avalanche tested
- 100% Rg tested
- Lead-free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
- 80V drain-source voltage
- Terminals:
- Solderable per MIL-STD-750, Method 2026
Applications
- Battery Management System (BMS)
- Brushless Direct Current (BLDC)
- Switch Mode Power Supply (SMPS)
- Telecommunications power systems
Package Dimensions
公開: 2022-11-15
| 更新済み: 2022-11-16