WeEn Semiconductors BYC30Y-600P Hyperfast Power Diode
WeEn Semiconductors BYC30Y-600P Hyperfast Power Diode features a low leakage current, low reverse recovery current, and a 2-lead IITO220 plastic package. This power diode reduces switching losses in associated MOSFET or IGBT. The BYC30Y-600P diode offers low thermal resistance. This power diode functions at 1.8V maximum forward voltage, 30A average forward current, and 600V repetitive peak reverse voltage. The WeEn BYC30Y-600P diode operates at +175°C junction temperature. Typical applications include active PFC in air conditioners, high-frequency switched-mode power supplies, and continuous current mode (CCM) power factor correction (PFC).
Features
- Isolated plastic package
- Low leakage current
- Low reverse recovery current
- Low thermal resistance
- Reduces switching losses in associated MOSFET or IGBT
Applications
- Active PFC in air conditioner
- High-frequency switched-mode power supplies
- CCM PFC
Specifications
- 1.8V maximum forward voltage
- 30A average forward current
- 600V repetitive peak reverse voltage
- +175°C junction temperature
- -65°C to +175°C storage temperature range
- 35ns maximum reverse recovery time
- 60A repetitive peak forward current
Package Outline
公開: 2020-07-29
| 更新済み: 2025-01-03