WeEn Semiconductors WNS Silicon Carbide Schottky Diodes
WeEn Semiconductors WNS Silicon Carbide Schottky Diodes are designed for high-frequency switched-mode power supplies. These diodes feature highly stable switching performance, extremely fast reverse recovery time, superior efficiency to silicon diode alternatives, and reduced losses in associated MOSFET. The WNS Schottky diodes offer up to 1200V of repetitive peak reverse voltage and a -55°C to 175°C storage temperature range. Typical applications include power factor correction, telecom/server SMPS, UPS, PV inverter, PC Silverbox, LED/OLED tv, and motor drives.
Features
- Highly stable switching performance
- Extremely fast reverse recovery time
- Superior in efficiency to silicon diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
Specifications
- Up to 1200V of repetitive peak reverse voltage
- 650V of reverse voltage
- 4A to 10A average forward current range IF(AV)
- -55°C to 175°C of storage temperature
- 175°C of junction temperature
Applications
- Power factor correction
- Telecom/Server SMPS
- UPS
- PV inverter
- PC silver box
- LED/OLED TV
- Motor drives
Related Products
WeEn Semiconductors WNSC Silicon Carbide Schottky Diodes
Optimized for use in switched-mode power supplies, in TO-220-2, TO-247-2, and TO-247-3 packages.
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| 部品番号 | データシート | If - 順電流（Forward Current） | Vf - 順電圧（Forward Voltage） | Ifsm - 順方向サージ電流（Forward Surge Current） | Ir - 逆電流（Reverse Current） | Vrrm - 繰返し逆電圧（Repetitive Reverse Voltage） | Vr - 逆電圧（Reverse Voltage） | パッケージ/ケース |
|---|---|---|---|---|---|---|---|---|
| WNSC5D046506Q |  |
4 A | 1.45 V | 28 A | 20 uA | 650 V | 650 V | TO-220-2L |
| WNSC5D066506Q | |
6 A | 1.45 V | 40 A | 30 uA | 650 V | 650 V | TO-220-2L |
| WNSC2D151200W6Q | |
公開: 2022-02-16
| 更新済み: 2022-06-15