WeEn Semiconductors WNSC2D16650CJ & WNSC2D20650CJ SiC Schottky Diodes
WeEn Semiconductors WNSC2D16650CJ and WNSC2D20650CJ Silicon Carbide (SiC) Schottky Diodes are 650V devices optimized for high-frequency switched-mode power supplies. SiC devices provide many advantages over silicon, including no reverse recovery current, temperature-independent switching, and excellent thermal performance. These features result in higher efficiency, faster-operating frequency, higher power density, lower EMI, and reduced system size and cost. These diodes feature extremely fast reverse recovery time, reduced losses in associated MOSFET, and low cooling requirements.
The WeEn Semiconductors WNSC2D16650CJ and WNSC2D20650CJ SiC Schottky Diodes are offered in a TO-3PF RoHS compliant package.
Features
- Highly stable switching performance
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
- Insulated package rated at 2500V RMS
Applications
- Power factor correction
- Telecom and server SMPS
- UPS
- PV inverters
- PC silverbox
- LED and OLED TVs
- Motor drives
Specifications
- 650V repetitive peak reverse voltage (VRRM)
- Average forward current (IO(AV))
- WNSC2D16650CJ: 16A
- WNSC2D20650CJ: 20A
- Recovered charge (Qr)
- WNSC2D16650CJ: 13nC
- WNSC2D20650CJ: 14nC
- 1.5V to 1.7V forward voltage (VF)
- 2500V RMS isolation voltage (Visol(RMS))
- 10pF isolation capacitance (Cisol)
- 175°C maximum junction temperature (Tj)
- TO-3PF package
- Halogen-free and RoHS compliant
Related Products
WeEn Semiconductors WNSC Silicon Carbide Schottky Diodes
Optimized for use in switched-mode power supplies, in TO-220-2, TO-247-2, and TO-247-3 packages.
Pin Designations
View Results ( 2 ) Page
| 部品番号 | データシート | If - 順電流（Forward Current） | Ifsm - 順方向サージ電流（Forward Surge Current） |
|---|---|---|---|
| WNSC2D20650CJQ |  |
10 A | 50 A |
| WNSC5D16650CJ6Q | |
16 A | 40 A |
公開: 2021-09-16
| 更新済み: 2022-03-11