HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

結果: 719
選択 画像 部品番号 メーカ 説明 データシート 在庫状況 価格: (JPY) 数量に基づき、単価ごとに表の結果をフィルタリングする 数量 RoHS ECADモデル 技術 取り付け様式 パッケージ/ケース トランジスタ極性 チャンネル数 Vds - ドレイン - ソース間破壊電圧 Id - 連続ドレイン電流 Rds On - 抵抗におけるドレイン - ソース Vgs - ゲート-ソース間電圧 Vgs th - ゲート・ソース間しきい電圧 Qg - ゲート電荷 最低動作温度 最高動作温度 Pd - 電力損失 チャネルモード 認証 トレードネーム パッケージ化
IXYS MOSFET Trench T2 HiperFET Power MOSFET 945在庫
3,510取寄中
¥4,335.2
¥3,056.2
¥2,813.7
¥2,785.5
最低: 1
複数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 320 A 3.5 mOhms 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET 10 Amps 800V 1.1 Rds 8,564在庫
¥1,094.6
¥579.7
¥513.2
¥460.1
最低: 1
複数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET 250V UltraJunc X3 Pwr MOSFET 602在庫
¥6,061
¥4,639.2
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 240 A 4.1 mOhms 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1,488在庫
¥4,551.1
¥2,943.3
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TO264 150V 400A N-CH 4CLASS 1,457在庫
¥11,553.9
¥9,348.1
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 400 A 3.1 mOhms 20 V 4.5 V 430 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube
IXYS MOSFET TO220 200V 72A N-CH X3CLASS 3,498在庫
¥1,890.2
¥1,056.4
¥973.3
¥948.4
最低: 1
複数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET 144在庫
¥5,310.2
¥4,250.5
¥3,674.1
¥3,400.1
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET TrenchT2 HiperFETs Power MOSFET 482在庫
30予想2026/12/30
¥3,807
¥2,812.1
¥2,458.3
¥2,273.9
最低: 1
複数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 400 A 2.3 mOhms 20 V 2 V 420 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube
IXYS MOSFET 1000V 52A PLUS247 Power MOSFET 94在庫
¥6,929.7
¥5,911.5
¥4,883.3
最低: 1
複数: 1
Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A 230在庫
¥3,180.8
¥2,018.1
¥1,682.6
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 70 A 40 mOhms 30 V 3.5 V 67 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube
IXYS MOSFET 4 Amps 1000V 788在庫
¥1,016.5
¥534.8
¥486.7
¥418.6
最低: 1
複数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 4 A 3.3 Ohms 20 V 6 V 26 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFET TO247 200V 140A N-CH X3CLASS 191在庫
¥3,215.7
¥2,232.4
¥1,762.3
¥1,709.2
¥1,700.9
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 140 A 9.6 mOhms 20 V 2.5 V 127 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET 180A 250V 257在庫
¥3,217.4
¥2,521.4
¥2,499.8
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 180 A 12.9 mOhms 20 V 5 V 345 nC - 55 C + 150 C 1.39 kW Enhancement HiPerFET Tube
IXYS MOSFET TO220 300V 56A N-CH X3CLASS 340在庫
¥1,931.7
¥1,119.5
¥981.7
¥948.4
最低: 1
複数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 56 A 27 mOhms 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 36A 1,398在庫
¥2,518.1
¥1,418.5
¥1,378.6
最低: 1
複数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 36 A 170 mOhms 30 V 5 V 93 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 44A 300在庫
¥2,747.3
¥1,561.3
¥1,543.1
最低: 1
複数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 44 A 140 mOhms 30 V - 55 C + 150 C 650 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 1,135在庫
¥4,635.9
¥3,011.4
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A 700在庫
¥6,587.5
¥4,752.1
¥4,544.5
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 80 A 65 mOhms 30 V 6.5 V 200 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFET 12 Amps 1200V 1.15 Rds 1,045在庫
720予想2026/12/14
¥3,481.5
¥2,453.3
¥2,200.8
¥2,165.9
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 12 A 1.35 Ohms 30 V 6.5 V 103 nC - 55 C + 150 C 543 W Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A 338在庫
¥2,938.3
¥1,682.6
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 50 A 80 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube

IXYS MOSFET 74 Amps 200V 0.034 Rds 483在庫
¥1,484.9
¥946.8
¥873.7
¥855.4
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 74 A 34 mOhms 20 V 5 V 107 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 64A 339在庫
¥3,737.3
¥2,518.1
¥2,204.1
¥2,202.5
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 64 A 85 mOhms 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 729在庫
¥1,257.4
¥674.4
¥588
¥554.8
最低: 1
複数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET 3 Amps 1200V 4.50 Rds 415在庫
¥1,931.7
¥1,119.5
¥996.6
¥948.4
最低: 1
複数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms 20 V 5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube

IXYS MOSFET 160A 300V 299在庫
¥4,004.7
¥2,790.5
¥2,476.6
¥2,474.9
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 160 A 19 mOhms 20 V 5 V 335 nC - 55 C + 150 C 1.39 kW Enhancement HiPerFET Tube