HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

結果: 722
選択 画像 部品番号 メーカ 説明 データシート 在庫状況 価格: (JPY) 数量に基づき、単価ごとに表の結果をフィルタリングする 数量 RoHS ECADモデル 技術 取り付け様式 パッケージ/ケース トランジスタ極性 チャンネル数 Vds - ドレイン - ソース間破壊電圧 Id - 連続ドレイン電流 Rds On - 抵抗におけるドレイン - ソース Vgs - ゲート-ソース間電圧 Vgs th - ゲート・ソース間しきい電圧 Qg - ゲート電荷 最低動作温度 最高動作温度 Pd - 電力損失 チャネルモード 認証 トレードネーム パッケージ化
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1,488在庫
¥4,551.1
¥2,938.3
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TO264 150V 400A N-CH 4CLASS 1,487在庫
¥11,553.9
¥9,334.8
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 400 A 3.1 mOhms 20 V 4.5 V 430 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube
IXYS MOSFET Trench T2 HiperFET Power MOSFET 945在庫
3,510取寄中
¥4,335.2
¥3,056.2
¥2,813.7
¥2,785.5
最低: 1
複数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 320 A 3.5 mOhms 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET 10 Amps 800V 1.1 Rds 8,779在庫
¥1,094.6
¥579.7
¥513.2
¥460.1
最低: 1
複数: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 1,135在庫
¥4,635.9
¥3,006.4
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET TO220 200V 72A N-CH X3CLASS 3,498在庫
¥1,890.2
¥1,056.4
¥973.3
¥946.8
最低: 1
複数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET TrenchT2 HiperFETs Power MOSFET 226在庫
300取寄中
¥3,807
¥2,812.1
¥2,458.3
¥2,273.9
最低: 1
複数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 75 V 400 A 2.3 mOhms 20 V 2 V 420 nC - 55 C + 175 C 1 mW Enhancement HiPerFET Tube
IXYS MOSFET 1000V 52A PLUS247 Power MOSFET 94在庫
¥6,929.7
¥5,911.5
¥4,883.3
最低: 1
複数: 1
Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET 20 Amps 800V 0.52 Rds 244在庫
¥2,199.2
¥1,220.8
¥1,154.4
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 20 A 520 mOhms 30 V 5 V 86 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFET 140 Amps 200V 0.018 Rds 284在庫
¥3,411.7
¥2,036.4
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 140 A 18 mOhms 20 V 2.5 V 240 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET 140 Amps 100V 0.011 Rds 470在庫
¥3,381.8
¥2,383.5
¥1,936.7
¥1,930.1
最低: 1
複数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 140 A 11 mOhms 20 V 5 V 155 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 149在庫
¥3,712.3
¥2,267.3
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 120 A 27 mOhms 20 V 3 V 150 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube

IXYS MOSFET 140 Amps 300V 0.024 Ohm Rds 507在庫
¥4,635.9
¥3,006.4
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 140 A 24 mOhms 20 V 5 V 185 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET 180 Amps 100V 6.1 Rds 1,275在庫
¥1,682.6
¥908.6
¥837.1
¥813.9
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 180 A 6.4 mOhms - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET TO264 650V 102A N-CH X2CLASS 224在庫
¥4,062.8
¥2,544.7
最低: 1
複数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 102 A 30 mOhms 30 V 3 V 152 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET PLUS247 650V 120A N-CH X2CLASS 201在庫
¥4,720.6
¥3,250.6
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A 348在庫
¥3,368.5
¥2,230.7
¥2,177.6
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 1.05 Ohms 30 V 6.5 V 64 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube

IXYS MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A 1,248在庫
¥2,514.8
¥1,416.8
¥1,373.6
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 340 A 3.2 mOhms 20 V 4 V 300 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube

IXYS MOSFET Trench HiperFET Power MOSFET 293在庫
¥2,438.3
¥1,370.3
¥1,320.5
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 86 A 43 mOhms 20 V 5 V 180 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET 472在庫
¥1,257.4
¥674.4
¥617.9
¥553.1
最低: 1
複数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 360 mOhms 30 V 5 V 38 nC 500 W HiPerFET Tube
IXYS MOSFET TO252 250V 30A N-CH X3CLASS 660在庫
¥1,544.7
¥817.2
¥752.4
¥732.5
最低: 1
複数: 1
Si SMD/SMT TO-252-3 N-Channel 1 Channel 250 V 30 A 60 mOhms 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET TO247 650V 80A N-CH X2CLASS 214在庫
¥3,182.5
¥2,096.2
¥1,822.1
¥1,755.7
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 38 mOhms 30 V 2.7 V 137 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET 12 Amps 1200V 1.15 Rds 1,047在庫
720予想2027/01/18
¥3,481.5
¥2,453.3
¥2,200.8
¥2,162.6
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 12 A 1.35 Ohms 30 V 6.5 V 103 nC - 55 C + 150 C 543 W Enhancement HiPerFET Tube

IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 277在庫
¥2,162.6
¥1,199.2
¥1,129.5
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 20 A 330 mOhms 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A 338在庫
¥2,938.3
¥1,682.6
¥1,568
¥1,468.3
最低: 1
複数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 50 A 80 mOhms 30 V 3.5 V 65 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube