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Diodes Incorporated DMN3730UFB/4 30V N-Ch MOSFETs

Diodes Incorporated DMN3730UFB/4 30V N-Channel MOSFETs are designed to minimize on-state resistance (RDS(ON)) and conduction loss, and yet maintain superior switching performance. Diodes Inc DMN3730UFB/4 MOSFETs are ideal for high efficiency power management applications such as load switches, portable applications, and power management functions. 

The DMN3730UFB/4 30V N-Channel MOSFETs feature a 0.6mm2 package footprint--10 times smaller than the SOT23 and low VGS(th), which allows them to be driven directly from a battery. The MOSFETs are considered to be "Green" devices, according to Diodes Incorporated's "Green" policy.

Features

  • 0.5mm ultra low profile package for thin application
  • 0.6mm2 package footprint, 10 times smaller than SOT23
  • Low VGS(th) can be driven directly from a battery
  • Low RDS(on)
  • Totally lead-free & fully RoHS compliant
  • Halogen and antimony free “green” device
  • ESD Protected gate 2kV
  • Qualified to AEC-Q101 standards for high reliability

Applications

  • Load switch
  • Portable applications
  • Power management functions
View Results ( 2 ) Page
部品番号 データシート Rds On - 抵抗におけるドレイン - ソース Id - 連続ドレイン電流
DMN3730UFB4-7 DMN3730UFB4-7 データシート 460 mOhms 730 mA
DMN3730UFB-7 DMN3730UFB-7 データシート 460 mOhms 730 mA
公開: 2011-10-12 | 更新済み: 2022-03-11