Qorvo TGS2355-SM High Power GaN Switch
Qorvo TGS2355-SM High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch that operates from 0.5GHz to 6.0GHz. Fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25), the TGS2355-SM provides up to 100W input power handling with <1.1dB insertion loss over most of the operating band and greater than 40dB isolation. These qualities make the TGS2355-SM GaN Switch ideal for high-power switching applications across both defense and commercial platforms.
The Qorvo TGS2355-SM High Power GaN Switch features an aluminum-nitride base with a LCP epoxy-sealed lid in a 5.0mm x 5.0mm air-cavity Quad Flat No-lead (QFN) package. The compact package design and minimal DC power consumption allows for easy system integration.
Features
- 0.5GHz to 6GHz frequency range
- <50ns switching speed
- >40dB isolation
- <1.1dB insertion loss
- 0V/-40V control voltage from either side of the MMIC
- 100W power handling (pulsed)
- Reflective switch
- -40°C to +85°C operating temperature range
- 5.0mm x 5.0mm x 1.42mm QFN32
- Halogen free, Pb-free, and RoHS compliant
Applications
- Commercial and military radar
- Communications
- Electronic warfare
- Test instruments
- General purpose
- High-power switching
Related Products
Qorvo TGS2355 High Power GaN Switch
0.5GHz to 6.0GHz SPDT reflective switch offering up to 100W input power handling, in a bare die.
Block Diagram
Package Outline
公開: 2015-03-18
| 更新済み: 2022-03-11