|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
¥3,674.1
-
12在庫
-
600予想2027/03/26
-
新製品
|
Mouser 部品番号
511-SCT019HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
12在庫
600予想2027/03/26
|
|
|
¥3,674.1
|
|
|
¥2,744
|
|
|
¥2,107.8
|
|
|
¥2,097.8
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
¥3,298.7
-
2,311在庫
|
Mouser 部品番号
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,311在庫
|
|
|
¥3,298.7
|
|
|
¥2,511.4
|
|
|
¥2,092.9
|
|
|
¥1,865.3
|
|
|
¥1,744.1
|
|
|
¥1,744.1
|
|
最低： 1
複数： 1
:
3,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥5,182.3
-
1,597在庫
|
Mouser 部品番号
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597在庫
|
|
|
¥5,182.3
|
|
|
¥3,795.4
|
|
|
¥3,705.7
|
|
|
¥3,509.7
|
|
|
¥3,509.7
|
|
最低： 1
複数： 1
:
3,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥4,147.5
-
428在庫
-
新製品
|
Mouser 部品番号
511-SCT016H120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
428在庫
|
|
|
¥4,147.5
|
|
|
¥2,998.1
|
|
|
¥2,953.3
|
|
|
¥2,851.9
|
|
|
¥2,612.8
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥3,780.4
-
148在庫
-
600予想2026/09/25
-
新製品
|
Mouser 部品番号
511-SCT020HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
148在庫
600予想2026/09/25
|
|
|
¥3,780.4
|
|
|
¥2,823.7
|
|
|
¥2,441.7
|
|
|
¥2,159.3
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥2,260.6
-
866在庫
-
新製品
|
Mouser 部品番号
511-SCT027H65G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
866在庫
|
|
|
¥2,260.6
|
|
|
¥1,578
|
|
|
¥1,282.3
|
|
|
¥1,212.5
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥1,519.8
-
1,754在庫
-
新製品
|
Mouser 部品番号
511-SCT055TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,754在庫
|
|
|
¥1,519.8
|
|
|
¥1,038.1
|
|
|
¥857.1
|
|
|
¥779
|
|
|
¥712.6
|
|
|
¥712.6
|
|
最低： 1
複数： 1
:
1,800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥4,438.2
-
600在庫
|
Mouser 部品番号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600在庫
|
|
|
¥4,438.2
|
|
|
¥3,552.9
|
|
|
¥3,072.9
|
|
|
¥2,908.4
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥3,102.7
-
465在庫
|
Mouser 部品番号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
465在庫
|
|
|
¥3,102.7
|
|
|
¥2,361.9
|
|
|
¥1,968.3
|
|
|
¥1,754
|
|
|
¥1,639.4
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥3,360.2
-
362在庫
|
Mouser 部品番号
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
362在庫
|
|
|
¥3,360.2
|
|
|
¥2,101.2
|
|
|
¥1,998.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥3,401.7
-
290在庫
-
1,200予想2026/08/31
|
Mouser 部品番号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
290在庫
1,200予想2026/08/31
|
|
|
¥3,401.7
|
|
|
¥2,418.4
|
|
|
¥2,084.6
|
|
|
¥1,873.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥3,147.6
-
409在庫
|
Mouser 部品番号
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
409在庫
|
|
|
¥3,147.6
|
|
|
¥1,958.3
|
|
|
¥1,837.1
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥2,750.6
-
261在庫
|
Mouser 部品番号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
261在庫
|
|
|
¥2,750.6
|
|
|
¥2,099.5
|
|
|
¥1,458.4
|
|
|
¥1,240.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥2,337
-
360在庫
-
600予想2026/07/31
|
Mouser 部品番号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
360在庫
600予想2026/07/31
|
|
|
¥2,337
|
|
|
¥1,634.4
|
|
|
¥1,265.7
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥2,307.1
-
499在庫
|
Mouser 部品番号
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
499在庫
|
|
|
¥2,307.1
|
|
|
¥1,621.1
|
|
|
¥1,254.1
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥1,916.8
-
517在庫
|
Mouser 部品番号
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
517在庫
|
|
|
¥1,916.8
|
|
|
¥1,151.1
|
|
|
¥1,026.5
|
|
|
¥986.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥2,229.1
-
481在庫
|
Mouser 部品番号
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481在庫
|
|
|
¥2,229.1
|
|
|
¥1,614.5
|
|
|
¥1,382
|
|
|
¥1,190.9
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥2,406.8
-
284在庫
-
1,200予想2026/08/10
|
Mouser 部品番号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
284在庫
1,200予想2026/08/10
|
|
|
¥2,406.8
|
|
|
¥1,835.4
|
|
|
¥1,420.2
|
|
|
¥1,202.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥3,655.9
-
43在庫
-
1,000予想2026/08/17
|
Mouser 部品番号
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
43在庫
1,000予想2026/08/17
|
|
|
¥3,655.9
|
|
|
¥2,622.7
|
|
|
¥2,381.9
|
|
|
¥2,380.2
|
|
|
¥2,254
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥2,752.3
-
51在庫
-
1,000予想2027/02/26
|
Mouser 部品番号
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
51在庫
1,000予想2027/02/26
|
|
|
¥2,752.3
|
|
|
¥1,941.7
|
|
|
¥1,855.3
|
|
|
¥1,654.4
|
|
|
¥1,544.7
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
¥2,263.9
-
66在庫
|
Mouser 部品番号
511-SCT040HU65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
66在庫
|
|
|
¥2,263.9
|
|
|
¥1,579.6
|
|
|
¥1,284
|
|
|
¥1,214.2
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
¥2,172.6
-
55在庫
|
Mouser 部品番号
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
55在庫
|
|
|
¥2,172.6
|
|
|
¥1,513.2
|
|
|
¥1,217.5
|
|
|
¥1,152.7
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
¥2,011.5
-
846在庫
|
Mouser 部品番号
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
846在庫
|
|
|
¥2,011.5
|
|
|
¥1,395.2
|
|
|
¥1,101.2
|
|
|
¥1,041.4
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
¥1,579.6
-
483在庫
|
Mouser 部品番号
511-SCT1000N170
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
483在庫
|
|
|
¥1,579.6
|
|
|
¥1,079.7
|
|
|
¥798.9
|
|
|
¥747.5
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
¥2,842
-
394在庫
|
Mouser 部品番号
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
394在庫
|
|
|
¥2,842
|
|
|
¥2,014.8
|
|
|
¥1,440.1
|
|
|
¥1,352.1
|
|
|
表示
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
|
N-Channel
|
|
日本
