|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL35N65G2V
- STMicroelectronics
-
1:
¥2,611.3
-
2,311在庫
|
Mouser 部品番号
511-SCTL35N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
2,311在庫
|
|
|
¥2,611.3
|
|
|
¥1,845.2
|
|
|
¥1,696.8
|
|
|
¥1,695.2
|
|
|
¥1,631.6
|
|
|
¥1,584.4
|
|
最低： 1
複数： 1
:
3,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
¥1,845.2
-
880在庫
|
Mouser 部品番号
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
880在庫
|
|
|
¥1,845.2
|
|
|
¥1,233.9
|
|
|
¥1,079.1
|
|
|
¥1,077.4
|
|
|
¥1,009
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥2,803.6
-
549在庫
|
Mouser 部品番号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
549在庫
|
|
|
¥2,803.6
|
|
|
¥1,739.2
|
|
|
¥1,736
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥4,753.1
-
1,597在庫
|
Mouser 部品番号
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597在庫
|
|
|
¥4,753.1
|
|
|
¥3,634.9
|
|
|
¥3,626.8
|
|
|
¥3,625.1
|
|
|
¥3,395.3
|
|
最低： 1
複数： 1
:
3,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
- SCT019HU120G3AG
- STMicroelectronics
-
1:
¥3,273
-
5在庫
-
600予想2027/02/08
-
新製品
|
Mouser 部品番号
511-SCT019HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
|
|
5在庫
600予想2027/02/08
|
|
|
¥3,273
|
|
|
¥2,692.8
|
|
|
¥2,329.3
|
|
|
¥2,058.7
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
¥3,799.5
-
745在庫
-
新製品
|
Mouser 部品番号
511-SCT016H120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
|
|
745在庫
|
|
|
¥3,799.5
|
|
|
¥2,749.8
|
|
|
¥2,744.9
|
|
|
¥2,743.3
|
|
|
¥2,562.4
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
- SCT020HU120G3AG
- STMicroelectronics
-
1:
¥3,343.1
-
418在庫
-
新製品
|
Mouser 部品番号
511-SCT020HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
|
|
418在庫
|
|
|
¥3,343.1
|
|
|
¥2,771
|
|
|
¥2,396.1
|
|
|
¥2,225
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥2,070.1
-
968在庫
-
新製品
|
Mouser 部品番号
511-SCT027H65G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
968在庫
|
|
|
¥2,070.1
|
|
|
¥1,447.4
|
|
|
¥1,258.4
|
|
|
¥1,175.2
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
- SCT040HU120G3AG
- STMicroelectronics
-
1:
¥2,202.1
-
607在庫
-
600予想2026/08/10
-
新製品
|
Mouser 部品番号
511-SCT040HU120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
|
|
607在庫
600予想2026/08/10
|
|
|
¥2,202.1
|
|
|
¥1,542
|
|
|
¥1,359.4
|
|
|
¥1,333.3
|
|
|
¥1,269.8
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥1,390.4
-
1,764在庫
-
新製品
|
Mouser 部品番号
511-SCT055TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,764在庫
|
|
|
¥1,390.4
|
|
|
¥953.6
|
|
|
¥841.1
|
|
|
¥764.5
|
|
|
¥699.3
|
|
|
¥699.3
|
|
最低： 1
複数： 1
:
1,800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
¥1,563.2
-
37在庫
-
1,800予想2026/06/15
-
新製品
|
Mouser 部品番号
511-SCT040TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37在庫
1,800予想2026/06/15
|
|
|
¥1,563.2
|
|
|
¥1,176.9
|
|
|
¥873.7
|
|
|
¥870.4
|
|
|
¥841.1
|
|
|
¥815
|
|
最低： 1
複数： 1
:
1,800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥3,351.3
-
106在庫
-
1,000予想2026/08/17
|
Mouser 部品番号
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
106在庫
1,000予想2026/08/17
|
|
|
¥3,351.3
|
|
|
¥2,405.9
|
|
|
¥2,337.4
|
|
|
¥2,180.9
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥2,523.2
-
169在庫
|
Mouser 部品番号
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
169在庫
|
|
|
¥2,523.2
|
|
|
¥1,781.6
|
|
|
¥1,714.8
|
|
|
¥1,623.5
|
|
|
¥1,515.9
|
|
最低： 1
複数： 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥2,911.2
-
527在庫
|
Mouser 部品番号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
527在庫
|
|
|
¥2,911.2
|
|
|
¥2,156.5
|
|
|
¥1,532.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥3,080.7
-
448在庫
|
Mouser 部品番号
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
448在庫
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥3,349.7
-
533在庫
-
1,200予想2026/09/14
|
Mouser 部品番号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
533在庫
1,200予想2026/09/14
|
|
|
¥3,349.7
|
|
|
¥2,107.6
|
|
|
¥1,912
|
|
|
¥1,814.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥2,945.4
-
459在庫
|
Mouser 部品番号
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
459在庫
|
|
|
¥2,945.4
|
|
|
¥2,154.9
|
|
|
¥1,892.4
|
|
|
見積り
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥2,771
-
328在庫
|
Mouser 部品番号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
328在庫
|
|
|
¥2,771
|
|
|
¥2,648.8
|
|
|
¥1,201.3
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥2,143.5
-
586在庫
|
Mouser 部品番号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
586在庫
|
|
|
¥2,143.5
|
|
|
¥1,498
|
|
|
¥1,225.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
¥2,127.2
-
584在庫
|
Mouser 部品番号
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
584在庫
|
|
|
¥2,127.2
|
|
|
¥1,486.6
|
|
|
¥1,212.7
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥1,765.3
-
537在庫
|
Mouser 部品番号
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537在庫
|
|
|
¥1,765.3
|
|
|
¥1,056.2
|
|
|
¥1,004.1
|
|
|
¥956.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥2,044
-
635在庫
|
Mouser 部品番号
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
635在庫
|
|
|
¥2,044
|
|
|
¥1,480
|
|
|
¥1,211.1
|
|
|
¥1,209.5
|
|
|
¥1,152.4
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
¥2,060.3
-
287在庫
-
1,200予想2026/08/10
|
Mouser 部品番号
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
287在庫
1,200予想2026/08/10
|
|
|
¥2,060.3
|
|
|
¥1,724.5
|
|
|
¥1,302.4
|
|
|
¥1,163.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
- SCT040HU65G3AG
- STMicroelectronics
-
1:
¥2,073.4
-
133在庫
|
Mouser 部品番号
511-SCT040HU65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
|
|
133在庫
|
|
|
¥2,073.4
|
|
|
¥1,449.1
|
|
|
¥1,260
|
|
|
¥1,176.9
|
|
最低： 1
複数： 1
:
600
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
¥2,414
-
30在庫
-
600取寄中
|
Mouser 部品番号
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
30在庫
600取寄中
|
|
|
¥2,414
|
|
|
¥1,921.8
|
|
|
¥1,744.1
|
|
|
¥1,150.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
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