|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
¥1,947.2
-
85在庫
|
Mouser 部品番号
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85在庫
|
|
|
¥1,947.2
|
|
|
¥1,363.2
|
|
|
¥1,172.8
|
|
|
¥1,171.2
|
|
|
¥956.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
¥2,184
-
73在庫
-
1,200予想2026/03/16
|
Mouser 部品番号
511-SCT070HU120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73在庫
1,200予想2026/03/16
|
|
|
¥2,184
|
|
|
¥1,529.6
|
|
|
¥1,353.6
|
|
|
¥1,104
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
¥1,420.8
-
594在庫
|
Mouser 部品番号
511-SCT1000N170
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
594在庫
|
|
|
¥1,420.8
|
|
|
¥972.8
|
|
|
¥718.4
|
|
|
¥630.4
|
|
|
¥628.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
¥2,544
-
510在庫
|
Mouser 部品番号
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510在庫
|
|
|
¥2,544
|
|
|
¥1,876.8
|
|
|
¥1,307.2
|
|
|
表示
|
|
|
見積り
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
¥4,665.6
-
1,597在庫
|
Mouser 部品番号
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597在庫
|
|
|
¥4,665.6
|
|
|
¥3,569.6
|
|
|
¥2,915.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
¥2,752
-
593在庫
|
Mouser 部品番号
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593在庫
|
|
|
¥2,752
|
|
|
¥1,707.2
|
|
|
¥1,491.2
|
|
|
¥1,489.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
¥2,809.6
-
90在庫
|
Mouser 部品番号
511-SCTWA40N12G24AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90在庫
|
|
|
¥2,809.6
|
|
|
¥1,996.8
|
|
|
¥1,539.2
|
|
|
¥1,529.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
¥3,876.8
-
600予想2026/07/27
|
Mouser 部品番号
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600予想2026/07/27
|
|
|
¥3,876.8
|
|
|
¥3,172.8
|
|
|
¥2,801.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥2,907.2
-
1,200取寄中
|
Mouser 部品番号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1,200取寄中
取寄中:
600 予想2026/05/01
600 予想2026/09/14
|
|
|
¥2,907.2
|
|
|
¥2,328
|
|
|
¥2,012.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
¥2,161.6
-
400取寄中
-
新製品
|
Mouser 部品番号
511-SCT027HU65G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
400取寄中
|
|
|
¥2,161.6
|
|
|
¥1,612.8
|
|
|
¥1,395.2
|
|
|
¥1,321.6
|
|
|
¥1,121.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
¥2,028.8
-
996予想2026/04/22
|
Mouser 部品番号
511-SCT040H120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996予想2026/04/22
|
|
|
¥2,028.8
|
|
|
¥1,422.4
|
|
|
¥1,236.8
|
|
|
¥1,235.2
|
|
|
¥1,009.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
¥2,001.6
-
1,113予想2026/03/10
|
Mouser 部品番号
511-SCT055HU65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,113予想2026/03/10
|
|
|
¥2,001.6
|
|
|
¥1,411.2
|
|
|
¥1,224
|
|
|
¥1,000
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
¥1,468.8
-
844予想2026/10/26
|
Mouser 部品番号
511-SCT10N120AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844予想2026/10/26
|
|
|
¥1,468.8
|
|
|
¥832
|
|
|
¥660.8
|
|
|
¥659.2
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
¥1,820.8
-
100取寄中
-
新製品
|
Mouser 部品番号
511-SCT040W120G3-4
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100取寄中
|
|
|
¥1,820.8
|
|
|
¥1,483.2
|
|
|
¥1,235.2
|
|
|
¥1,100.8
|
|
|
¥934.4
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
-
1,000:
¥1,576
-
非在庫リードタイム 16 週間
-
新製品
|
Mouser 部品番号
511-SCT018H65G3-7
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
非在庫リードタイム 16 週間
|
|
最低： 1,000
複数： 1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
- SCT020H120G3AG
- STMicroelectronics
-
1:
¥2,948.8
-
非在庫リードタイム 16 週間
-
新製品
|
Mouser 部品番号
511-SCT020H120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
|
|
非在庫リードタイム 16 週間
|
|
|
¥2,948.8
|
|
|
¥2,361.6
|
|
|
¥2,041.6
|
|
|
¥2,041.6
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
¥1,748.8
-
非在庫リードタイム 17 週間
-
新製品
|
Mouser 部品番号
511-SCT070W120G3-4
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
非在庫リードタイム 17 週間
|
|
|
¥1,748.8
|
|
|
¥1,044.8
|
|
|
¥889.6
|
|
|
¥828.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
- SCT070W120G3AG
- STMicroelectronics
-
1:
¥1,942.4
-
非在庫リードタイム 17 週間
-
新製品
|
Mouser 部品番号
511-SCT070W120G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
|
|
非在庫リードタイム 17 週間
|
|
|
¥1,942.4
|
|
|
¥1,580.8
|
|
|
¥1,318.4
|
|
|
¥1,174.4
|
|
|
¥996.8
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
|
|
|
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
-
1:
¥2,886.4
-
非在庫リードタイム 32 週間
-
NRND
|
Mouser 部品番号
511-SCTWA40N120G2V
NRND
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
非在庫リードタイム 32 週間
|
|
|
¥2,886.4
|
|
|
¥2,198.4
|
|
|
¥1,848
|
|
最低： 1
複数： 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
STMicroelectronics SCT055H65G3AG
- SCT055H65G3AG
- STMicroelectronics
-
1,000:
¥830.4
-
非在庫リードタイム 16 週間
-
新製品
|
Mouser 部品番号
511-SCT055H65G3AG
新製品
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
非在庫リードタイム 16 週間
|
|
最低： 1,000
複数： 1,000
|
|
SiC MOSFETS
|
|
|
|
|
|
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