Comchip Technology 最新の個別半導体
個別半導体のタイプ
Comchip Technology AMMBT2222AM NPN Automotive Small Signal Transistor
10/31/2025
10/31/2025
The device has a 75V collector-base voltage rating and a 600mA collector current-continuous rating.
Comchip Technology CPDE5V0U ESD Protection Diode
10/31/2025
10/31/2025
The device offers a fast response time, low reverse clamping voltage, and a low leakage current.
Comchip Technology AUS1 Automotive Ultra Fast Recovery Rectifiers
10/31/2025
10/31/2025
These are available with a maximum peak repetitive reverse voltage (VRRM) of 600V, 800V, and 1000V.
Comchip Technology AMMBT2907AM PNP Automotive Small Signal Transistor
10/31/2025
10/31/2025
The device has a -60V collector-base voltage rating & a -600mA collector current-continuous rating.
Comchip Technology CPDE5V0 ESD Protection Diode
10/31/2025
10/31/2025
The device offers a fast response time, low reverse clamping voltage, and a low leakage current.
Comchip Technology CDBKA20120L-HF Low VF Schottky Rectifier
08/23/2023
08/23/2023
Designed with soft and fast switching capacity with 120V reverse voltage and 20A forward current.
Comchip Technology CDBZC0140L-HF Schottky Diode
08/03/2023
08/03/2023
Designed with 40V reverse voltage (VR) and 100mA average rectified forward current (IO).
Comchip Technology CDBHA30100LR-HF Low VF Schottky Barrier Rectifier
06/13/2023
06/13/2023
Designed with 100V repetitive peak reverse voltage and 30A average forward rectified current.
Comchip Technology CDBHA10200LR-HF Low VF Schottky Barrier Rectifier
06/13/2023
06/13/2023
Designed with 200V repetitive peak reverse voltage and 10A average forward rectified current.
Comchip Technology BAS316-HF High-Speed Switching Diode
05/23/2023
05/23/2023
Features 100V repetitive peak reverse voltage, 200mW power dissipation, and 250mA forward current.
Comchip Technology BAS321-HF Fast Switching Diode
05/23/2023
05/23/2023
Features 250V repetitive peak reverse voltage, 250mW power dissipation, and 200mA forward current.
Comchip Technology BAS416-HF Fast Switching Diode
05/23/2023
05/23/2023
Features 85V repetitive peak reverse voltage, 250mW power dissipation, and 200mA forward current.
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onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04/14/2026
04/14/2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04/07/2026
04/07/2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes
04/02/2026
04/02/2026
AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.
Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes
04/02/2026
04/02/2026
High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.
Vishay VS-HOT200C080 200A 80VパワーMOSFETモジュール
04/02/2026
04/02/2026
このデバイスは、標準のディスクリートソリューションと比べて基板占有面積を最大15%削減します。
STMicroelectronics STL059N4S8AGパワーMOSFET
03/31/2026
03/31/2026
Smart STripFET F8テクノロジーで設計された40V Nチャンネル拡張モード対応パワーMOSFETです。
Infineon Technologies OptiMOS™ 6 60VパワーMOSFET
03/27/2026
03/27/2026
堅牢なパワーMOSFETテクノロジーにより、OptiMOS 5を超える優れた性能を提供します。
Infineon Technologies NチャンネルOptiMOS™ 7 25VパワーMOSFET
03/27/2026
03/27/2026
アプリケーションに最適化された性能により、データセンター、サーバー、AIのピーク性能を実現します。
RECOM Power RVS002 Micropower Isolated Power Bridge Rectifier
03/24/2026
03/24/2026
Designed for micro-power isolated power supply applications in space-constrained environments.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03/24/2026
03/24/2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Renesas Electronics TP65B110HRU 双方向スイッチ (BDS)
03/20/2026
03/20/2026
650Vおよび110mΩノーマリオフ型窒化ガリウム (GaN)。コンパクトなTOLTパッケージで供給。
Vishay T3KN12CA thru T3KN100CA PAR® TVS
03/18/2026
03/18/2026
TVSs are bidirectional, 3000W peak-pulse-power devices ideal for automated placement.
Infineon Technologies 中電圧CoolGaN™双方向スイッチ
03/17/2026
03/17/2026
これらのデバイスは、さまざまなアプリケーションでバッテリ切断スイッチとして機能するのに最適です。
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE パック™ 成形モジュール付き
03/17/2026
03/17/2026
定格電圧1,200Vが特徴で、41.6mm × 52.5mm のパッケージに収められており、第4世代SiC MOSFETが統合されています。
Infineon Technologies OptiMOS™ 8パワーMOSFET
03/17/2026
03/17/2026
Nチャンネル、ノーマルレベルの80Vまたは100V対応MOSFETで、非常に低いオン抵抗［RDS(ON)］を備えています。
Texas Instruments TVS2210フラットクランプ・サージ保護デバイス
03/12/2026
03/12/2026
最大25Aまでの障害電流を堅牢にシャントし、過渡または落雷から保護するように設計されています。
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