|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥3,102.7
-
363在庫
|
Mouser 部品番号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
363在庫
|
|
|
¥3,102.7
|
|
|
¥2,016.5
|
|
|
¥1,876.9
|
|
|
¥1,662.7
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
77 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
¥2,260.6
-
575在庫
-
1,000予想2027/09/17
|
Mouser 部品番号
511-SCT027H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
|
|
575在庫
1,000予想2027/09/17
|
|
|
¥2,260.6
|
|
|
¥1,285.6
|
|
|
¥1,282.3
|
|
|
¥1,212.5
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
60 A
|
39.3 mOhms
|
- 10 V, + 22 V
|
3 V
|
48.6 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
¥1,931.7
-
467在庫
|
Mouser 部品番号
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
467在庫
|
|
|
¥1,931.7
|
|
|
¥1,058.1
|
|
|
¥986.6
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP247-4
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
¥2,229.1
-
481在庫
|
Mouser 部品番号
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
481在庫
|
|
|
¥2,229.1
|
|
|
¥1,488.3
|
|
|
¥1,382
|
|
|
¥1,190.9
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP247-4
|
1 Channel
|
650 V
|
30 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
37.5 nC
|
- 55 C
|
+ 200 C
|
240 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
- SCT055TO65G3
- STMicroelectronics
-
1:
¥1,519.8
-
1,404在庫
|
Mouser 部品番号
511-SCT055TO65G3
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
|
|
1,404在庫
|
|
|
¥1,519.8
|
|
|
¥832.2
|
|
|
¥779
|
|
|
¥720.9
|
|
|
¥720.9
|
|
最低： 1
複数： 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
3 V
|
31 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥2,752.3
-
24在庫
-
1,000予想2027/01/29
|
Mouser 部品番号
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
24在庫
1,000予想2027/01/29
|
|
|
¥2,752.3
|
|
|
¥1,654.4
|
|
|
¥1,564.7
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
- SCT040H65G3AG
- STMicroelectronics
-
1:
¥2,011.5
-
656在庫
|
Mouser 部品番号
511-SCT040H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
|
|
656在庫
|
|
|
¥2,011.5
|
|
|
¥1,131.1
|
|
|
¥1,101.2
|
|
|
¥1,041.4
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
|
1 Channel
|
650 V
|
30 A
|
40 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
39.5 nC
|
- 55 C
|
+ 175 C
|
221 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
¥1,702.5
-
8在庫
-
1,800予想2027/02/05
|
Mouser 部品番号
511-SCT040TO65G3
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
8在庫
1,800予想2027/02/05
|
|
|
¥1,702.5
|
|
|
¥1,199.2
|
|
|
¥890.3
|
|
|
¥830.5
|
|
|
¥830.5
|
|
最低： 1
複数： 1
:
1,800
|
|
|
SMD/SMT
|
TOLL-8
|
1 Channel
|
650 V
|
35 A
|
63 mOhms
|
- 10 V, + 22 V
|
3 V
|
42.5 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
¥2,272.2
-
1在庫
-
600予想2027/04/16
|
Mouser 部品番号
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1在庫
600予想2027/04/16
|
|
|
¥2,272.2
|
|
|
¥1,699.2
|
|
|
¥1,554.7
|
|
|
¥1,347.1
|
|
最低： 1
複数： 1
|
|
|
Through Hole
|
HiP-247-4
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
AEC-Q100
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
-
1:
¥2,617.7
-
非在庫リードタイム 25 週間
-
新製品
|
Mouser 部品番号
511-SCT018H65G3-7
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
非在庫リードタイム 25 週間
|
|
|
¥2,617.7
|
|
|
¥1,842
|
|
|
¥1,551.4
|
|
|
¥1,448.4
|
|
最低： 1
複数： 1
:
1,000
|
|
|
SMD/SMT
|
H2PAK-7
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
- 10 V, 22 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
